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FDG6316P from FAIRCHILD, Fairchild Semiconductor 3000pcs , SOT-363/SC70-6,P-Channel 1.8V Specified PowerTrench MOSFET
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FDG6316P FAIRCHILD N/a 3000
FDG6316P from FSC, Fairchild Semiconductor 3000pcs , SOT-353,P-Channel 1.8V Specified PowerTrench MOSFET

Applications • High performance trench technology for extremely • Battery management low R DS(ON)• Load switch • Compact industry standard SC70-6 surface mount package SG S D1 or 4 6 or 3DG G2 or 5 5 or 2DG4 or 1Pin 1 D 3 or 6 SS SC70-6 The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. oAbsolute Maximum Ratings T =25 C unless otherwise noted ASymbol Parameter Ratings UnitsV Drain-Source Voltage –12 V DSSV Gate-Source Voltage ± 8 V GSSI Drain Current – Continuous (Note 1) –0.7 A D – Pulsed –1.8 P Power Dissipation for Single Operation (Note 1) 0.3 W DT , T Operating and Storage Junction Temperature Range –55 to +150 °C J STGThermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1) 415 R °C/W θJAPackage Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .16 FDG6316P 7’’ 8mm 3000 units FDG6316P Rev D W) 2001 Fairchild Semiconductor Corporation FDG6316P Features This P-Channel 1.8V specified MOSFET uses • –0.7 A, –12 V. R = 270 mΩ @ V = –4.5 V DS(ON) GSFairchild’s advanced low voltage PowerTrench process. R = 360 mΩ @ V = –2.5 V DS(ON) GSIt has been optimized for battery power management
FDG6316P(16*) FSC
FDG6316P-NL FAIRCHIL

FDG6316P ,P-Channel 1.8V Specified PowerTrench MOSFETFeatures This P-Channel 1.8V specified MOSFET uses • –0.7 A, –12 V. R = 270 mΩ @ V = –4.5 V DS(ON) ..
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