FDG6306P ,P-Channel 2.5V Specified PowerTrench MOSFETFeatures This P -Channel 2.5V specified MOSFET is a rugged • –0.6 A, –20 V. R = 420 mΩ @ V = –4.5 V ..
FDG6308P ,P-Channel 1.8V Specified PowerTrench MOSFETFeaturesThis P-Channel 1.8V specified MOSFET uses• –0.6 A, –20 V. R = 0.40 Ω @ V = –4.5 VDS(ON) GSF ..
FDG6308P ,P-Channel 1.8V Specified PowerTrench MOSFETApplications• High performance trench technology for extremely• Battery managementlow RDS(ON)• Load ..
FDG6313N ,25V Dual N-Channel, Digital FETElectrical Characteristics (T = 25 C unless otherwise noted )ASymbol Parameter Conditions Min Typ M ..
FDG6316 ,P-Channel 1.8V Specified PowerTrench MOSFETApplications • High performance trench technology for extremely • Battery management low R DS(ON) ..
FDG6316P ,P-Channel 1.8V Specified PowerTrench MOSFETFeatures This P-Channel 1.8V specified MOSFET uses • –0.7 A, –12 V. R = 270 mΩ @ V = –4.5 V DS(ON) ..
FP15R12W1T4 , EasyPIM™ module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC
FP15R12YT3 , IGBT-modules
FP1A3M ,Hybrid transistorFEATURES PACKAGE DRAWING (UNIT: mm)• Up to 0.7 A current drive available On-chip bias resistor ..
FP1A3M-T1B ,Hybrid transistorFEATURES PACKAGE DRAWING (UNIT: mm)• Up to 0.7 A current drive available On-chip bias resistor ..
FP1A3M-T2B ,Hybrid transistorFEATURES PACKAGE DRAWING (UNIT: mm)• Up to 0.7 A current drive available On-chip bias resistor ..
FP1A4A ,Hybrid transistorDATA SHEETCOMPOUND TRANSISTORFP1 SERIESon-chip resistor PNP silicon epitaxial transistorFor mid-s ..
FDG6306P
P-Channel 2.5V Specified PowerTrench MOSFET
FDG6306P February 2001 FDG6306P Ò P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P -Channel 2.5V specified MOSFET is a rugged · –0.6 A, –20 V. R = 420 mW @ V = –4.5 V DS(ON) GS gate version of Fairchild Semiconductor’s advanced R = 630 mW @ V = –2.5 V DS(ON) GS PowerTrench process. It has been optimized for power management applications with a wide range of gate · Low gate charge drive voltage (2.5V – 12V). · High performance trench technology for extremely Applications low R DS(ON) · Battery management · Compact industry standard SC70-6 surface mount · Load switch package S G S D 1 or 4 6 or 3 D G 2 or 5 5 or 2 G D G 4 or 1 Pin 1 D 3 or 6 S S SC70-6 The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. o Absolute Maximum Ratings TA=25 C unless otherwise noted Symbol Parameter Ratings Units V Drain-Source Voltage –20 V DSS V Gate-Source Voltage ± 12 V GSS ID Drain Current – Continuous (Note 1) –0.6 A – Pulsed –2.0 P Power Dissipation for Single Operation (Note 1) 0.3 W D T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1) 415 °C/W qJA Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .06 FDG6306P 7’’ 8mm 3000 units Ó2001 FDG6306P Rev C(W)
