FDG311N ,N-Channel 2.5V Specified PowerTrench MOSFETFeaturesThis N-Channel MOSFET is produced using Fairchild 1.9 A, 20 V. R = 0.115 Ω @ V = 4.5 VDS( ..
FDG311N_NL ,N-Channel 2.5V Specified PowerTrench MOSFETApplications R .DS(ON)• Load switch Compact industry standard SC70-6 surface mount Power manag ..
FDG311N_NL ,N-Channel 2.5V Specified PowerTrench MOSFETFeaturesThis N-Channel MOSFET is produced using Fairchild 1.9 A, 20 V. R = 0.115 Ω @ V = 4.5 VDS( ..
FDG312P ,P-Channel 2.5V Specified PowerTrench MOSFETFeaturesThis P-Channel MOSFET is produced using Fairchild• -1.2 A, -20 V. R = 0.18 Ω @ V = -4.5 VDS ..
FDG313N ,Digital FET, N-ChannelFeaturesThis N-Channel enhancement mode field effect• 0.95 A, 25 V. R = 0.45 Ω @ V = 4.5 VDS(on) GS ..
FDG313N_NL ,Digital FET, N-ChannelApplications• Gate-Source Zener for ESD ruggedness• Load switch (>6kV Human Body Model).• Batte ..
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FDG311N
N-Channel 2.5V Specified PowerTrench MOSFET
FDG311N N-Channel 2.5V Specified PowerT MOSFET This N-Channel MOSFET is produced using Fairchild . R1.9 A, 20 V = 0.1 Ω @ V = 4.5 V GS Semiconductor's advanced PowerTrench process that R Ω . = 2.5 V has been especially tailored to minimize the on-state GS resistance and yet maintain low gate charge for superior switching performance. These devices areLow gate charge (3nC typical). well suited for portable electronics applications. R. •Load switch Power management package. S 1 6 D D 2 5 G D3 3 4 D 0 bsoluteaximum Rai Mtngs AT 25 =C unless otherwise noted A mbolySamerteraPtRaingsUnits Ve VltoVS Ve Vltoe±8VGSS I i(Note 1a)9AD - Plsu6 PDsneiosiir SoiPwo(Note 1a)W (Note 1b) T, Tttiio°CJstg Thermal Characteristics Rlaist Jmtoiib(Note 1b) °WθJA Package Marking and Ordering Infoirmaton ice MarkingDeviceDevReel SizeTape WidthQuantity .7m8mts 2000 1N Rev. FDG31D 3000 uniFDG311N11 C/260enton-tunc-Aance, ResTherm -55 t +150peratOperaton Temure Rangeorage Jng and Sunc 480. 750.ngle Operatpaton fr Di ed 1.- ContnuousDrain Current ageGatourc-S DS 20Draiagen-Sourc -6SC7 DC/DC converter Compact industry standard SC70-6 surface mount DS(ON) Applications High performance trench technology for extremely low DS(ON) @ V = 0.150 DS(ON) 15 FeaturesGeneral Description rench FDG311N February 2000
