FDFS6N303 ,FETKEY N-Channel MOSFET with Schottky DiodeFeatures General DescriptionMOSFET with Schottky Diode NFETKEYDFS6N303 oAMOSFET ELECTRICALV = ..
FDFS6N303_NL ,30V N-Channel MOSFET with Schottky DiodeFeatures General DescriptionMOSFET with Schottky Diode DFS6N303 oAMOSFET ELECTRICALV = VI V ..
FDFS6N548 ,30V Integrated N-Channel PowerTrench?MOSFET and Schottky Diodefeatures a fast switching, low gate Schottky and MOSFET incorporated into single power surface ch ..
FDFS6N754 ,30V Integrated N-Channel PowerTrench?MOSFET and Schottky DiodeApplicationsfor design flexibility DC/DC converters Low Gate Charge (Qg = 4nC) Low Mi ..
FDG1024NZ ,20V Dual N-Channel PowerTrench?MOSFETapplications as a Max r = 389 mΩ at V = 1.5 V, I = 0.8 ADS(on) GS Dreplacement for bipolar digita ..
FDG311N ,N-Channel 2.5V Specified PowerTrench MOSFETFeaturesThis N-Channel MOSFET is produced using Fairchild 1.9 A, 20 V. R = 0.115 Ω @ V = 4.5 VDS( ..
FP0705R2-R10-R , High Current, Low-Profile Power Inductors
FP0705R2-R12-R , High Current, Low-Profile Power Inductors
FP0705R2-R15-R , High Current, Low-Profile Power Inductors
FP0705R2-R18-R , High Current, Low-Profile Power Inductors
FP1007R1-R22-R , High Current, High Frequency, Power Inductors
FP1007R2-R17-R , High Current, High Frequency, Power Inductors
FDFS6N303
FETKEY N-Channel MOSFET with Schottky Diode
October 2001 F DFS6N303 FETKEY N -C hannel MOSFET with Schottky Diode General Description Features Fairchild Semiconductor's FETKEY technology incorporates 6 A, 3 0 V. R = 0.035 W @ V = 10 V. DS(ON ) GS R = 0. 050 W @ V = 4.5 V . a high cell density MOSFET and low forward drop (0.35 V) DS(ON ) GS Schottky diode into a single surface mount power package. V < 0.28 V @ 0.1 A F The MOSFET and Schottky diode are isolated inside the V < 0.42 V @ 3 A F package. The general purpose pinout has been chosen to V < 0.50 V @ 6 A . F maximize flexi bility and ease of use. FETKEY products are particularly suited for switching applications such as DC/ DC Schottky and MOSFET incorporated into single power buck, boost, synchronous, and non-synchronous converters surface mount SO-8 package. w here the MOSFET is driven as low as 4.5V and fast switching, high efficiency and small PCB footprint is General purpose pinout for design flexi bility. desirable. Ideal for DC/DC converter applications. T M T M SOIC-16 SOT-23 SuperSOT -6 SO-8 SOT-223 SuperSOT -8 D C A 1 8 D C A C 2 7 C D S 3 6 G D S G 4 5 A SO-8 1 A o MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter F DFS6N303 Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage ± 20 V GSS I Drain Current - Continuous (Note 1a) 6 A D - Pulsed 30 P Power Dissipation for Dual Operation 2 W D Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1c ) 0.9 T ,T Operating and Storage Temperature Range -55 to 150 °C J STG o Schottky Diode Maximum Ratings T = 25 C unless otherwise noted A V Repetitive Peak Reverse Voltage 30 V RRM I Average Forward Current (Note 1a) 2 A O © 2001 FDFS6N303 Rev. D FDFS 6N303 pin
