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FDFMA3N109FAIRCHILN/a3500avai30V Integrated N-Channel PowerTrench甅OSFET and Schottky Diode


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FDFMA3N109
30V Integrated N-Channel PowerTrench甅OSFET and Schottky Diode
® FDFMA3N109 Integrated N-Channel PowerTrench MOSFET and Schottky Diode April 2008 FDFMA3N109 tm ® Integrated N-Channel PowerTrench MOSFET and Schottky Diode General Description Features MOSFET: This device is designed specifically as a single package • 2.9 A, 30 V R = 123 mΩ @ V = 4.5 V DS(ON) GS solution for a boost topology in cellular handset and R = 140 mΩ @ V = 3.0 V DS(ON) GS other ultra-portable applications. It features a MOSFET = 163 mΩ @ V = 2.5 V RDS(ON) GS with low input capacitance, total gate charge and on- Schottky: state resistance, and an independently connected • V < 0.46 V @ 500mA F schottky diode with low forward voltage and reverse • Low profile – 0.8 mm maximum – in the new package leakage current to maximize boost efficiency. MicroFET 2x2 mm The MicroFET 2x2 package offers exceptional thermal ) • HBM ESD protection level = 1.8kV typical (Note 3 performance for its physical size and is well suited to • RoHS Compliant switching and linear mode applications. PIN 1 A NC D 1 6 A K K D 2 5 NC G 3 D 4 S K G S MicroFET 2x2 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DS V Gate-Source Voltage ±12 V GS I Drain Current – Continuous (T = 25°C, V = 4.5V) 2.9 D C GS – Continuous (T = 25°C, V = 2.5V) 2.7 A C GS – Pulsed 10 P Power Dissipation for Single Operation (Note 1a) 1.5 D W Power Dissipation for Single Operation (Note 1b) 0.65 T , T Operating and Storage Temperature –55 to +150 J STG °C V Schottky Repetitive Peak Reverse Voltage 28 V RRM I Schottky Average Forward Current 1 A O Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 83 R θJA R Thermal Resistance, Junction-to-Ambient (Note 1b) 193 θJA °C/W Thermal Resistance, Junction-to-Ambient (Note 1c) 101 R θJA R Thermal Resistance, Junction-to-Ambient (Note 1d) 228 θJA Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 109 FDFMA3N109 7’’ 8mm 3000 units FDFMA3N109 Rev B2 ©2008
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