FDFC3N108 ,20V N-Channel 1.8V Specified PowerTrench MOSFET with Schottky DiodeElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions Min Ty ..
FDFM2N111 ,Integrated N-Channel PowerTrench MOSFET and Schottky Diodefeatures a fast switching, low gate charge MOSFET with very low on-state R ..
FDFM2P110 ,Integrated P-Channel PowerTrench MOSFET and Schottky DiodeApplicationscharge MOSFET with very low on-state resistance. DC-DC ConverterPin 11 62 53 4Top Botto ..
FDFM2P110 ,Integrated P-Channel PowerTrench MOSFET and Schottky DiodeGeneral Description –3.5 A, –20 V R = 140 mΩ @ V = –4.5 V FDFM2P110 combines the exceptional perfo ..
FDFMA2N028Z ,20V Integrated N-Channel PowerTrench?MOSFET and Schottky DiodeElectrical Characteristics T = 25°C unless otherwise notedJSymbol Parameter Test Conditions Min Typ ..
FDFMA2P853 ,-20V Integrated P-Channel PowerTrench?MOSFET and Schottky DiodeFeaturesThis device is designed specifically as a single package MOSFET:solution for the battery ch ..
FODM3051 ,4-pin Full Pitch MFP 600V Random Phase Triac Driver Output OptocouplerFEATURESPACKAGE DIMENSIONS• Compact 4-pin surface mount package (2.4 mm maximum standoff height)PIN ..
FODM3051R1 ,4-pin Full Pitch MFP 600V Random Phase Triac Driver Output OptocouplerAPPLICATIONS • Solenoid/valve controls0.094 (2.39)0.079 (2.01)• Interfacing microprocessors to 115 ..
FODM3052_NF098 ,600V Random Phase Triac Driver 10mAApplicationsmini-flat package. The lead pitch is 2.54mm. They are Industrial controlsdesigned for in ..
FODM3053 ,4-pin Full Pitch MFP 600V Random Phase Triac Driver Output Optocoupler 4-PIN FULL PITCH MINI-FLAT PACKAGERANDOM PHASE TRIAC DRI ..
FODM3053_NF098 ,600V Random Phase Triac Driver 5mAApplicationsmini-flat package. The lead pitch is 2.54mm. They are Industrial controlsdesigned for in ..
FODM3053R2 ,4-pin Full Pitch MFP 600V Random Phase Triac Driver Output Optocouplerfeatures greatly enhanced static dv/dt capability to ensure stable switching performance of inducti ..
FDFC3N108
20V N-Channel 1.8V Specified PowerTrench MOSFET with Schottky Diode
FDFC3N108 January 2004 FDFC3N108 Ò N-Channel 1.8V Specified PowerTrench MOSFET with Schottky Diode General Description Features This N-Channel 1.8V specified MOSFET uses · 3 A, 20 V R = 70 mW @ V = 4.5 V DS(ON) GS Fairchild’s advanced low voltage PowerTrench process. R = 95 mW @ V = 2.5 V DS(ON) GS It is combined with a low forward drop Schottky that is isolated from the MOSFET, providing a compact power · Low gate charge solution for battery power management and DC/DC converter applications. · High performance trench technology for extremely low R Applications DS(ON) · Battery management/Charger Application · DC/DC Conversion D2 S1 D1 1 6 G2 2 5 S2 TM SuperSOT -6 G1 Pin 1 3 4 SuperSOT™-6 o MOSFET Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 20 V DSS V Gate-Source Voltage ±12 V GSS I Drain Current – Continuous (Note 1a) 3 A D – Pulsed 12 P Maximum Power Dissipation (Note 1a) 0.96 W D (Note 1b) 0.90 (Note 1c) 0.70 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J stg Schottky Diode Maximum Ratings V Repetitive Peak reverse voltage 20 V RRM I Average Forward Current 2.0 A O Thermal Characteristics 130 R Thermal Resistance, Junction-to-Ambient (Note 1a) °C/W qJA 60 Thermal Resistance, Junction-to-Case (Note 1) R qJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .108 FDFC3N108 7’’ 8mm 3000 units FDFC3N108 Rev C (W) Ó2004
