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FDD8770FSCN/a160avai25V N-Channel PowerTrench? MOSFET


FDD8770 ,25V N-Channel PowerTrench? MOSFETNOITAT®FDD8770/FDU8770 N-Channel PowerTrench MOSFETNEMELMPIEEMarch 2006FDD8770/FDU8770 ..
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FDD8770
25V N-Channel PowerTrench? MOSFET
N O I T A T ® FDD8770/FDU8770 N-Channel PowerTrench MOSFET N E M E L MP I E E March 2006 FDD8770/FDU8770 ® N-Channel PowerTrench MOSFET 25V, 35A, 4.0mΩ General Description Features „ Max r = 4.0mΩ at V = 10V, I = 35A This N-Channel MOSFET has been designed specifically DS(on) GS D to improve the overall efficiency of DC/DC converters using „ Max r = 5.5mΩ at V = 4.5V, I = 35A DS(on) GS D either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low „ Low gate charge: Q = 52nC(Typ), V = 10V g(10) GS r and fast switching speed. DS(on) „ Low gate resistance „ RoHS Compliant Application „ Vcore DC-DC for Desktop Computers and Servers „ VRM for Intermediate Bus Architecture D G D G S I-PAK G DS Short Lead I-PAK (TO-251AA) S MOSFET Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 25 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous (Package Limited) 35 I -Continuous (Die Limited) 210 A D -Pulsed (Note 1) 407 E Single Pulse Avalanche Energy (Note 2) 113 mJ AS P Power Dissipation 115 W D T , T Operating and Storage Temperature -55 to 175 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case TO-252,TO-251 1.3 °C/W θJC R Thermal Resistance, Junction to Ambient TO-252,TO-251 100 °C/W θJA 2 R Thermal Resistance, Junction to Ambient TO-252,1in copper pad area 52 °C/W θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDD8770 FDD8770 TO-252AA 13’’ 12mm 2500 units FDU8770 FDU8770 TO-251AA N/A(Tube) N/A 75 units FDU8770 FDU8770_F071 TO-251AA N/A(Tube) N/A 75 units ©2006 1 FDD8770/FDU8770 Rev. A R F D A E L
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