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FDD7030FSCN/a2500avai30V N-Channel PowerTrench MOSFET


FDD7030 ,30V N-Channel PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise notedASymbol Parameter Test Conditions Min Typ ..
FDD7030BL ,30V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 56 A, 30 V R = 9.5 mΩ @ V = 10 V DS(ON) GSspeci ..
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FDD7N20TM ,N-Channel UniFETTM MOSFET 200V, 5A, 690m?Features DescriptionTM ®UniFET MOSFET is Fairchild Semiconductor s high voltage •R = 580 mΩ (Typ.) ..
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FDD8444 ,40V N-Channel PowerTrench?MOSFETFeatures„ Typ r = 4mΩ at V = 10V, I = 50A „ Automotive Engine ControlDS(on) GS D„ ..
FOD4116 ,6-Pin DIP 600V Zero Crossing Triac Driver Output OptocouplerApplications Solid-state relays Industrial controls Lighting controlsStatic power switches AC motor ..
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FOD617B ,4-Pin High Operating Temperature Phototransistor OptocouplersBlock DiagramANODE, CATHODE 1 4 COLLECTOR1 4ANODE COLLECTORCATHODE, ANODE 2 3 EMITTER4CATHODE 2 3 E ..


FDD7030
30V N-Channel PowerTrench MOSFET
FDD7030BL/FDU7030BL June 2003 FDD7030BL/FDU7030BL Ò 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed · 56 A, 30 V R = 9.5 mW @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 13 mW @ V = 4.5 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers. It has been optimized for · Low gate charge low gate charge, low RDS( ON) , fast switching speed and extremely low R in a small package. DS(ON) · Fast Switching Applications · High performance trench technology for extremely · DC/DC converter low R DS(ON) · Motor Drives D D G I-PAK G S (TO-251AA) D-PAK TO-252 G D S (TO-252) S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage ±20 V GSS I Continuous Drain Current @T =25°C (Note 3) 56 A D C @T =25°C (Note 1a) 14 A Pulsed (Note 1a) 100 P W D Power Dissipation @T =25°C (Note 3) 60 C @T =25°C (Note 1a) 2.8 A @T =25°C (Note 1b) 1.3 A T , T Operating and Storage Junction Temperature Range –55 to +175 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Case (Note 1) 2.5 °C/W qJC R Thermal Resistance, Junction-to-Ambient (Note 1a) 45 qJA (Note 1b) R 96 qJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape width Quantity FDD7030BL FDD7030BL D-PAK (TO-252) 13’’ 12mm 2500 units FDU7030BL FDU7030BL I-PAK (TO-251) Tube N/A 75 Ó2003 Fairchild Semiconductor Corp. FDD7030BL/FDU7030BL Rev CW)
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