FDD6N50 ,N-Channel UniFETTM MOSFET 500V, 6A, 900m?Applications• LCD/LED/PDP TV• Lighting• Uninterruptible Power Supply• AC-DC Power SupplyDDGGGDI-PAK ..
FDD7030 ,30V N-Channel PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise notedASymbol Parameter Test Conditions Min Typ ..
FDD7030BL ,30V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 56 A, 30 V R = 9.5 mΩ @ V = 10 V DS(ON) GSspeci ..
FDD7N20TM ,N-Channel UniFETTM MOSFET 200V, 5A, 690m?Applications• LCD/LED/PDP TV• Consumer Appliances• Lighting• Uninterruptible Power Supply• AC-DC Po ..
FDD7N20TM ,N-Channel UniFETTM MOSFET 200V, 5A, 690m?Features DescriptionTM ®UniFET MOSFET is Fairchild Semiconductor s high voltage •R = 580 mΩ (Typ.) ..
FDD8424H ,40V Dual N & P-Channel PowerTrench?MOSFETGeneral DescriptionQ1: N-ChannelThese dual N and P-Channel enhancement mode Power MOSFETs are p ..
FOD4116 ,6-Pin DIP 600V Zero Crossing Triac Driver Output OptocouplerApplications Solid-state relays Industrial controls Lighting controlsStatic power switches AC motor ..
FOD420 ,Random Phase Snubberless Triac DriverApplications Solid-state relays Industrial controlsLighting controls Static power switchesAC motor ..
FOD4208 ,Random Phase Snubberless Triac DriverApplications Solid-state relays Industrial controlsLighting controls Static power switchesAC motor ..
FOD4216 ,Random Phase Snubberless Triac DriverFeatures Description300mA on-state current The FOD420, FOD4208, FOD4216 and FOD4218devices consist ..
FOD4218 ,6-Pin DIP 800V Random Phase Triac Driver Output OptocouplerApplications Solid-state relays Industrial controlsLighting controls Static power switchesAC motor ..
FOD617B ,4-Pin High Operating Temperature Phototransistor OptocouplersBlock DiagramANODE, CATHODE 1 4 COLLECTOR1 4ANODE COLLECTORCATHODE, ANODE 2 3 EMITTER4CATHODE 2 3 E ..
FDD6N50
N-Channel UniFETTM MOSFET 500V, 6A, 900m?
TM FDD6N50/ FDU6N50 N-Channel UniFET MOSFET April 2013 FDD6N50/ FDU6N50 TM N-Channel UniFET MOSFET 500 V, 6 A, 900 m Features Description TM ® UniFET MOSFET is Fairchild Semiconductor ’s high voltage •R = 900 m (Max.) @ V = 10 V, I = 3 A DS(on) GS D MOSFET family based on planar stripe and DMOS technology. • Low Gate Charge (Typ.12.8 nC) This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche •Low C (Typ. 9 pF) rss energy strength. This device family is suitable for switching • 100% Avalanche Tested power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic • Improved dv/dt Capability lamp ballasts. Applications • LCD/LED/PDP TV • Lighting • Uninterruptible Power Supply • AC-DC Power Supply D D G G G D I-PAK D-PAK S S S Absolute Maximum Ratings Symbol Parameter FDD6N50/ FDU6N50 Unit V Drain-Source Voltage 500 V DSS I Drain Current - Continuous (T = 25C) 6 A D C - Continuous (T = 100C) 3.8 A C (Note 1) I Drain Current - Pulsed 24 A DM V Gate-Source voltage 30 V GSS (Note 2) E Single Pulsed Avalanche Energy 270 mJ AS I Avalanche Current (Note 1) 6 A AR E Repetitive Avalanche Energy (Note 1) 8.9 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation (T = 25C) 89 W D C - Derate above 25C 0.71 W/C T T Operating and Storage Temperature Range -55 to +150 C J, STG T Maximum Lead Temperature for Soldering Purpose, L 300 C 1/8” from Case for 5 Seconds Thermal Characteristics Symbol Parameter FDD6N50/ FDU6N50 Unit R Thermal Resistance, Junction-to-Case, Max. 1.4 JC C/W R Thermal Resistance, Junction-to-Ambient, Max. 83 JA ©2006 1 FDD6N50/ FDU6N50 Rev. C0
