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FDU6696FSCN/a62avai30V N-Channel PowerTrench MOSFET
FDD6696FAIRCHILDN/a202avai30V N-Channel PowerTrench MOSFET


FDD6696 ,30V N-Channel PowerTrench MOSFETFeaturesThis N-Channel MOSFET has been designed• 50A, 30 V R = 8.0 mΩ @ V = 10 VDS(ON) GSspecifical ..
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FDD6696-FDU6696
30V N-Channel PowerTrench MOSFET
FDD6696/FDU6696 December 2002 FDD6696/FDU6696 Ò 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed · 50A, 30 V R = 8.0 mW @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 10.7 mW @ V = 4.5 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers. It has been optimized for · Low gate charge (17nC typical) low gate charge, low RDS( ON) and fast switching speed. · Fast switching Applications · DC/DC converter · High performance trench technology for extremely low R DS(ON) · Motor drives D D G I-PAK G S (TO-251AA) D-PAK TO-252 G D S (TO-252) S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Unit s V Drain-Source Voltage 30 V DSS V Gate-Source Voltage ± 16 GSS ID Continuous Drain Current @TC=25°C (Note 3) 50 A @T =25°C (Note 1a) 13 A Pulsed (Note 1a) 100 P Power Dissipation @T =25°C (Note 3) 52 W D C @TA=25°C (Note 1a) 3.8 @T =25°C (Note 1b) 1.6 A T , T Operating and Storage Junction Temperature Range –55 to +175 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Case (Note 1) 2.9 °C/W qJC RqJA Thermal Resistance, Junction-to-Ambient (Note 1a) 40 Thermal Resistance, Junction-to-Ambient (Note 1b) 96 Package Marking and Ordering Information Device Marking Device Package Reel Size Tape width Quantity FDD6696 FDD6696 D-PAK (TO-252) 13’’ 12mm 2500 units FDU6696 FDU6696 I-PAK (TO-251) Tube N/A 75 Ó2002 FDD6696/FDU6696 Rev D (W)
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