FDD6690 ,N-Channel/ Logic Level/ PowerTrenchTM MOSFETElectrical Characteristics T = 25°C unless otherwise notedASymbol Parameter Test Conditions Min Typ ..
FDD6690 ,N-Channel/ Logic Level/ PowerTrenchTM MOSFETApplications• DC/DC converter• High performance trench technology for extremelylow R• Motor Drives ..
FDD6690A ,N-Channel, Logic Level, PowerTrench MOSFETGeneral DescriptionThis N-Channel Logic level MOSFET is produced using• 46 A, 30 V. R = 0.0125 Ω @ ..
FDD6692 ,30V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 54 A, 30 V. R = 12 mΩ @ V = 10 V DS(ON) GSspeci ..
FDD6696 ,30V N-Channel PowerTrench MOSFETFeaturesThis N-Channel MOSFET has been designed• 50A, 30 V R = 8.0 mΩ @ V = 10 VDS(ON) GSspecifical ..
FDD6760A ,25V N-Channel PowerTrench?MOSFETApplications Vcore DC-DC for Desktop Computers and Servers VRM for Intermediate Bus ArchitectureD ..
FOD2741B ,8-PIN DIP Error Amplifier Optocoupler OPTICALLY ISOLATEDERROR AMPLIFIERFOD2741A FOD2741B FOD2741CDESCRIPTIONThe FOD2741 Op ..
FOD2741C ,8-PIN DIP Error Amplifier Optocouplerapplications. The device comes in a 8-pin dip white package.1
FOD2742A ,8-PIN SOIC Error Amplifier Optocoupler OPTICALLY ISOLATEDERROR AMPLIFIERFOD2742A FOD2742B FOD2742CDESCRIPTIONThe FOD2742 Opt ..
FOD2742AR1V ,8-PIN SOIC Error Amplifier OptocouplerAPPLICATIONS • Power supplies regulation • DC to DC convertersPIN DEFINITIONSPin Number Pin Name Pi ..
FOD2743B ,8-PIN DIP Error Amplifier OptocouplerAPPLICATIONS •Power supplies regulation • DC to DC convertersPIN DEFINITIONSPin Number Pin Name Pin ..
FOD2743C ,8-PIN DIP Error Amplifier Optocoupler OPTICALLY ISOLATEDERROR AMPLIFIERFOD2743A FOD2743B FOD2743CDESCRIPTIONThe FOD2743 Op ..
FDD6690
N-Channel/ Logic Level/ PowerTrenchTM MOSFET
FDD6690A July 2003 FDD6690A Ò 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET is produced using Fairchild · 46 A, 30 V R = 12 mW @ V = 10 V DS(ON) GS Semiconductor’s advanced PowerTrench process that R = 14 mW @ V = 4.5 V DS(ON) GS has been especially tailored to minimize the on state resistance and yet maintain low gate charge for · Low gate charge superior switching performance. · Fast Switching Speed Applications · DC/DC converter · High performance trench technology for extremely low R · Motor Drives DS(ON) D D G G S D-PAK TO-252 (TO-252) S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage ±20 V GSS I Continuous Drain Current @T =25°C (Note 3) 46 A D C @T =25°C (Note 1a) 12 A Pulsed (Note 1a) 100 P Power Dissipation @T =25°C (Note 3) 56 W D C @T =25°C (Note 1a) 3.3 A @T =25°C (Note 1b) 1.5 A T , T Operating and Storage Junction Temperature Range –55 to +175 J STG °C Thermal Characteristics Thermal Resistance, Junction-to-Case (Note 1) 2.7 R °C/W qJC Thermal Resistance, Junction-to-Ambient (Note 1a) 45 RqJA (Note 1b) R 96 qJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape width Quantity FDD6690A FDD6690A D-PAK (TO-252) 13’’ 12mm 2500 units Ó2003 Fairchild Semiconductor Corp. FDD6690A Rev EW)
