FDD6670A ,N-Channel, Logic Level, PowerTrench MOSFETGeneral DescriptionThis N-Channel Logic level MOSFET is produced using 66 A, 30 V. R = 0.008 Ω @ V ..
FDD6670S ,30V N-Channel PowerTrench SyncFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions Min Ty ..
FDD6672A ,30V N-Channel PowerTrench MOSFETApplications • Low gate charge (33 nC typical) • DC/DC converter • High power and current handling ..
FDD6676 ,30V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 78 A, 30 V R = 7.5 mΩ @ V = 10 V DS(ON) GSspeci ..
FDD6676AS ,30V N-Channel PowerTrench SyncFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions MinTyp ..
FDD6676AS ,30V N-Channel PowerTrench SyncFETFeatures The FDD6676AS is designed to replace a single • 90 A, 30 V R = 5.7 mΩ @ V = 10 V DS(ON) ..
FOA3251B1 ,High Speed Clock and Data Recovery for Fiber Optic Applicationscharacteristics.Terms of delivery and rights to technical change reserved.We hereby disclaim any an ..
FOD053L ,SO8, 1MBIT/S HI SPEED DUAL CHANNEL TRANSISTOR LVTTL/LVCMOS 3.3VHIGH SPEED TRANSISTOR OPTOCOUPLERSSINGLE- ..
FOD053LR1 ,SO8, 1MBIT/S HI SPEED DUAL CHANNEL TRANSISTORFEATURES•Low power consumption• High speed •Available in single channel 8-pin DIP (FOD250L), 8-pin ..
FOD053LR2 ,SO8, 1MBIT/S HI SPEED DUAL CHANNEL TRANSISTORAPPLICATIONS• Line receivers • Pulse transformer replacement• High speed logic ground isolation: LV ..
FOD053LV ,SO8, 1MBIT/S HI SPEED DUAL CHANNEL TRANSISTOR LVTTL/LVCMOS 3.3VHIGH SPEED TRANSISTOR OPTOCOUPLERSSINGLE- ..
FOD070LR1 ,8-Pin SOIC Single-Channel Low Current High Gain Split Darlington Output OptocouplerAPPLICATIONS • Digital logic ground isolation – LVTTL/LVCMOS•Telephone ring detector• EIA-RS-232C l ..
FDD6670A
N-Channel, Logic Level, PowerTrench MOSFET
FDD6670A February 2000 FDD6670A N-Channel, Logic Level, PowerTrench MOSFET Features General Description This N-Channel Logic level MOSFET is produced using 66 A, 30 V. R = 0.008 Ω @ V = 10 V DS(on) GS Fairchild Semiconductor's advanced PowerTrench process R = 0.010 Ω @ V = 4.5 V. that has been especially tailored to minimize the on-state DS(on) GS resistance and yet maintain low gate charge for superior Low gate charge (35nC typical). switching performance. Fast switching speed. Applications High performance trench technology for extremely low R . • DC/DC converter DS(on) Motor drives D D G G S S TO-252 o TC=25 C unless otherwise noted Absolute Maximum Ratings Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage 20 V GSS ± I Maximum Drain Current -Continuous (Note 1) 66 A D o (Note 1a) T = 25 C 15 A Maximum Drain Current -Pulsed 100 o P Maximum Power Dissipation T = 25 C (Note 1) 70 W D C o T = 25 C (Note 1a) 3.2 A o T = 25 C (Note 1b) 1.3 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J stg ° Thermal Characteristics (Note 1) R Thermal Resistance, Junction-to-Case 1.8 C/W JC ° θ (Note 1a) R JA Thermal Resistance, Junction-to-Ambient 40 C/W ° θ Thermal Resistance, Junction-to-Ambient (Note 1b) 96 C/W ° Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDD6670A FDD6670A 13’’ 16mm 2500 2000 FDD6670A, Rev. C
