FDD6670 ,N-Channel/ Logic Level/ PowerTrench MOSFETGeneral DescriptionThis N-Channel Logic level MOSFET is produced using 66 A, 30 V. R = 0.008 Ω @ V ..
FDD6670A ,N-Channel, Logic Level, PowerTrench MOSFETGeneral DescriptionThis N-Channel Logic level MOSFET is produced using 66 A, 30 V. R = 0.008 Ω @ V ..
FDD6670S ,30V N-Channel PowerTrench SyncFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions Min Ty ..
FDD6672A ,30V N-Channel PowerTrench MOSFETApplications • Low gate charge (33 nC typical) • DC/DC converter • High power and current handling ..
FDD6676 ,30V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 78 A, 30 V R = 7.5 mΩ @ V = 10 V DS(ON) GSspeci ..
FDD6676AS ,30V N-Channel PowerTrench SyncFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions MinTyp ..
FOA3251B1 ,High Speed Clock and Data Recovery for Fiber Optic Applicationscharacteristics.Terms of delivery and rights to technical change reserved.We hereby disclaim any an ..
FOD053L ,SO8, 1MBIT/S HI SPEED DUAL CHANNEL TRANSISTOR LVTTL/LVCMOS 3.3VHIGH SPEED TRANSISTOR OPTOCOUPLERSSINGLE- ..
FOD053LR1 ,SO8, 1MBIT/S HI SPEED DUAL CHANNEL TRANSISTORFEATURES•Low power consumption• High speed •Available in single channel 8-pin DIP (FOD250L), 8-pin ..
FOD053LR2 ,SO8, 1MBIT/S HI SPEED DUAL CHANNEL TRANSISTORAPPLICATIONS• Line receivers • Pulse transformer replacement• High speed logic ground isolation: LV ..
FOD053LV ,SO8, 1MBIT/S HI SPEED DUAL CHANNEL TRANSISTOR LVTTL/LVCMOS 3.3VHIGH SPEED TRANSISTOR OPTOCOUPLERSSINGLE- ..
FOD070LR1 ,8-Pin SOIC Single-Channel Low Current High Gain Split Darlington Output OptocouplerAPPLICATIONS • Digital logic ground isolation – LVTTL/LVCMOS•Telephone ring detector• EIA-RS-232C l ..
FDD6670
N-Channel/ Logic Level/ PowerTrench MOSFET
FDD6670A February 2000 FDD6670A N-Channel, Logic Level, PowerTrench MOSFET Features General Description This N-Channel Logic level MOSFET is produced using 66 A, 30 V. R = 0.008 Ω @ V = 10 V DS(on) GS Fairchild Semiconductor's advanced PowerTrench process R = 0.010 Ω @ V = 4.5 V. that has been especially tailored to minimize the on-state DS(on) GS resistance and yet maintain low gate charge for superior Low gate charge (35nC typical). switching performance. Fast switching speed. Applications High performance trench technology for extremely low R . • DC/DC converter DS(on) Motor drives D D G G S S TO-252 o TC=25 C unless otherwise noted Absolute Maximum Ratings Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage 20 V GSS ± I Maximum Drain Current -Continuous (Note 1) 66 A D o (Note 1a) T = 25 C 15 A Maximum Drain Current -Pulsed 100 o P Maximum Power Dissipation T = 25 C (Note 1) 70 W D C o T = 25 C (Note 1a) 3.2 A o T = 25 C (Note 1b) 1.3 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J stg ° Thermal Characteristics (Note 1) R Thermal Resistance, Junction-to-Case 1.8 C/W JC ° θ (Note 1a) R JA Thermal Resistance, Junction-to-Ambient 40 C/W ° θ Thermal Resistance, Junction-to-Ambient (Note 1b) 96 C/W ° Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDD6670A FDD6670A 13’’ 16mm 2500 2000 FDD6670A, Rev. C
