FDD6630A ,30V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 21 A, 30 V R = 35 mΩ @ V = 10 V DS(ON) GSspecif ..
FDD6632 ,N-Channel Logic Level UltraFET ?Trench Power MOSFET 30V, 9A, 90mOhmfeatures low gate charge while maintainingr = 0.058Ω (Typ), V = 10V, I = 9Alow on-resistance. DS(O ..
FDD6635 ,35V N-Channel PowerTrench?MOSFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions MinTyp ..
FDD6637 ,-35V P-Channel PowerTrench?MOSFETApplications • Inverter • Power Supplies DDGG SD-PAKTO-252S(TO-252) oAbsolute Maximum Ratings ..
FDD6637 ,-35V P-Channel PowerTrench?MOSFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions Min Ty ..
FDD6644 ,30V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 67 A, 30 V. R = 8.5 mΩ @ V = 10 V DS(ON) GSspec ..
FOA3251B1 ,High Speed Clock and Data Recovery for Fiber Optic Applicationscharacteristics.Terms of delivery and rights to technical change reserved.We hereby disclaim any an ..
FOD053L ,SO8, 1MBIT/S HI SPEED DUAL CHANNEL TRANSISTOR LVTTL/LVCMOS 3.3VHIGH SPEED TRANSISTOR OPTOCOUPLERSSINGLE- ..
FOD053LR1 ,SO8, 1MBIT/S HI SPEED DUAL CHANNEL TRANSISTORFEATURES•Low power consumption• High speed •Available in single channel 8-pin DIP (FOD250L), 8-pin ..
FOD053LR2 ,SO8, 1MBIT/S HI SPEED DUAL CHANNEL TRANSISTORAPPLICATIONS• Line receivers • Pulse transformer replacement• High speed logic ground isolation: LV ..
FOD053LV ,SO8, 1MBIT/S HI SPEED DUAL CHANNEL TRANSISTOR LVTTL/LVCMOS 3.3VHIGH SPEED TRANSISTOR OPTOCOUPLERSSINGLE- ..
FOD070LR1 ,8-Pin SOIC Single-Channel Low Current High Gain Split Darlington Output OptocouplerAPPLICATIONS • Digital logic ground isolation – LVTTL/LVCMOS•Telephone ring detector• EIA-RS-232C l ..
FDD6630A
30V N-Channel PowerTrench MOSFET
FDD6630A April 2001 FDD6630A Ò Ò 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed · 21 A, 30 V R = 35 mW @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 50 mW @ V = 4.5 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers. It has been optimized for · Low gate charge (5nC typical) low gate charge, low RDS( ON) and fast switching speed. · Fast switching Applications · High performance trench technology for extremely · DC/DC converter low R DS(ON) · Motor drives . D D G G S TO-252 S o Absolute Maximum Ratings TA=25 C unless otherwise noted Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage ±20 V GSS ID Drain Current – Continuous (Note 3) 21 A – Pulsed (Note 1a) 100 P W D Power Dissipation (Note 1) 28 (Note 1a) 3.2 (Note 1b) 1.3 T , T Operating and Storage Junction Temperature Range –55 to +175 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Case (Note 1) 4.5 °C/W qJC R Thermal Resistance, Junction-to-Ambient (Note 1a) 40 °C/W qJA R Thermal Resistance, Junction-to-Ambient (Note 1b) 96 °C/W qJA Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDD6630A FDD6630A 13’’ 16mm 2500 units Ó2001 FDD6630A Rev D(W)
