FDD6035AL ,N-Channel, Logic Level, PowerTrench MOSFETGeneral DescriptionThis N-Channel Logic level MOSFET is produced using• 46 A, 30 V. R = 0.0125 Ω @ ..
FDD6035AL_NL ,N-Channel, Logic Level, PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise notedASymbol Parameter Test Conditions Min Typ ..
FDD6035AL_NL ,N-Channel, Logic Level, PowerTrench MOSFETApplications• DC/DC converter• High performance trench technology for extremelylow R• Motor Drives ..
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FDD6035AL
N-Channel, Logic Level, PowerTrench MOSFET
F FDD6690A DD6035AL September 2001 FDD6035AL N-Channel, Logic Level, PowerTrench MOSFET Features General Description This N-Channel Logic level MOSFET is produced using • 46 A, 30 V. R = 0.0125 Ω @ V = 10 V DS(ON) GS Fairchild Semiconductor's advanced PowerTrench process R = 0.016 Ω @ V = 4.5 V. that has been especially tailored to minimize the on state DS(ON) GS resistance and yet maintain low gate charge for superior • Low gate charge (17nC typical). switching performance. • Fast switching speed. Applications • High performance trench technology for extremely low R . • DC/DC converter DS(ON) • Motor drives D D G G S TO-252 S o T =25 C unless otherwise noted A Absolute Maximum Ratings Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage 20 V GSS ± I Drain Current - Continuous (Note 1) 46 A D (Note 1a) 12 Drain Current - Pulsed 100 o P Maximum Power Dissipation @ T = 25 C (Note 1) 50 W D C o T = 25 C (Note 1a) 2.8 A o (Note 1b) T = 25 C 1.3 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J stg ° Thermal Characteristics R Thermal Resistance, Junction-to-Case (Note 1a) 2.5 C/W JC ° θ R Thermal Resistance, Junction-to-Ambient (Note 1b) 96 C/W JA ° θ Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDD6035AL FDD6035AL 13’’ 16mm 2500 2001 FDD6035AL, Rev. A
