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FDD6035AL_NL from FAIRCHIL, Fairchild Semiconductor 210pcs , TO252,N-Channel, Logic Level, PowerTrench MOSFET
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FDD6035AL_NL FAIRCHIL N/a 210
FDD6035AL_NL from FAIRCHILD, Fairchild Semiconductor 210pcs , TO252 , Alternate PN:FDD6035ALNL,N-Channel, Logic Level, PowerTrench MOSFET

Electrical Characteristics T = 25°C unless otherwise notedASymbol Parameter Test Conditions Min Typ Max UnitsDrain-Source Avalanche Ratings (Note 2)E Drain-Source Avalanche Energy Single Pulse, V = 15 V, I = 12A 180 mJAS DD DI Drain-Source Avalanche Current 12 AASOff CharacteristicsBV Drain–Source Breakdown Voltage V = 0 V, I = 250 μA 30 VDSS GS DΔBVDSS Breakdown Voltage Temperature 24I = 250 μA,Referenced to 25°C mV/°CDCoefficient ΔTJIDSS Zero Gate Voltage Drain Current V = 24 V, V = 0 V 1 μADS GSI Gate–Body Leakage V = ±20 V, V = 0 V ±100 nAGSS GS DSOn Characteristics (Note 2)V Gate Threshold Voltage V = V , I = 250 μA 1 1.9 3 VGS(th) DS GS DGate Threshold Voltage –5ΔVGS(th) I = 250 μA,Referenced to 25°C mV/°CDTemperature Coefficient ΔTJ7.7 12RDS(on) Static Drain–Source VGS = 10 V, ID = 12 A mΩ9.9 14On–Resistance V = 4.5 V, I = 10 AGS D11.4 19V = 10 V, I = 12 A,T =125°CGS D JI On–State Drain Current V = 10 V, V = 5 V 50 AD(on) GS DSg Forward Transconductance V = 10 V, I = 12 A 47 SFS DS DDynamic CharacteristicsCiss Input Capacitance 1230 pFV = 15 V, V = 0 V,DS GSC Output Capacitance 325 pFossf = 1.0 MHzC Reverse Transfer Capacitance 150 pFrssR Gate Resistance V = 15 mV, f = 1.0 MHz 1.5 pFG GSSwitching Characteristics (Note 2)t Turn–On Delay Time 10 19 nsd(on)t Turn–On Rise Time 7 13 nsr VDD = 15 V, ID = 1 A,t Turn–Off Delay Time V = 10 V, R = 6 Ω 29 46 nsd(off) GS GENt Turn–Off Fall Time 12 21 nsfQ Total Gate Charge 13 18 nCgV = 15V, I = 12 A,DS DQ Gate–Source Charge 3.5 nCgsV = 5 VGSQ Gate–Drain Charge 5.1 nCgdFDD6035AL Rev. D(W)FDD6035ALApplications• DC/DC converter• High performance trench technology for extremelylow R• Motor Drives DS(ON)DDGGSD-PAKTO-252(TO-252)SoAbsolute Maximum Ratings T =25 C unless otherwise notedASymbol Parameter Ratings UnitsV Drain-Source Voltage 30 VDSSV Gate-Source Voltage ±20 VGSSI Continuous Drain Current @T =25°C (Note 3) 46 AD C@T =25°C (Note 1a) 12APulsed (Note 1a) 100P Power Dissipation @T =25°C (Note 3) 56 WD C@T =25°C (Note 1a) 3.3A@T =25°C (Note 1b) 1.5AT , T Operating and Storage Junction Temperature Range –55 to +175J STG °CThermal CharacteristicsThermal Resistance, Junction-to-Case (Note 1) 2.7R °C/WθJCThermal Resistance, Junction-to-Ambient (Note 1a) 45RθJA(Note 1b)R 96θJAPackage Marking and Ordering InformationDevice Marking Device Package Reel Size Tape width QuantityFDD6035AL FDD6035AL D-PAK (TO-252) 13’’ 12mm 2500 units2003 Fairchild Semiconductor Corporation FDD6035AL Rev. D(W)FDD6035AL
FDD6035AL-NL FAIRCHILD

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