FDD5612 ,60V N-Channel PowerTrench MOSFETFeatures specifically to improve the overall efficiency of DC/DC converters using either synchronou ..
FDD5614 ,60V P-Channel PowerTrench MOSFETApplications• DC/DC converter • High performance trench technology for extremelylow RDS(ON)• Power ..
FDD5614P ,60V P-Channel PowerTrench MOSFETFeaturesThis 60V P-Channel MOSFET uses Fairchild’s high• –15 A, –60 V. R = 100 mΩ @ V = –10 VDS(ON ..
FDD5670 ,60V N-Channel PowerTrench MOSFETApplications• High performance trench technology for extremely• DC/DC converterlow RDS(ON)• Motor d ..
FDD5680 ,N-Channel, PowerTrench MOSFETApplications• High performance trench technology for extremelylow R .• DC/DC converterDS(on)• Motor ..
FDD5680 ,N-Channel, PowerTrench MOSFETGeneral DescriptionThis N-Channel MOSFET is produced using Fairchild• 38 A, 60 V. R = 0.021 Ω @ V = ..
FN4A4M ,RESISTOR BUILT-IN TYPE PNP TRANSISTORDATA SHEETSILICON TRANSISTORFN4xxxRESISTOR BUILT-IN TYPE PNP TRANSISTOR
FDD5612
60V N-Channel PowerTrench MOSFET
FDD5612 March 2001 FDD5612 60V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed Features specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional • 18 A, 60 V. R = 55 mΩ @ V = 10 V DS(ON) GS switching PWM controllers. R = 64 mΩ @ V = 6 V DS(ON) GS These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable • Optimized for use in high frequency DC/DC R specifications. The result is a MOSFET that is DS(ON) converters. easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall • Low gade charge. efficiency. • Very fast switching. D D G G S TO-252 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 60 V DSS V Gate-Source Voltage ±20 V GSS I Drain Current – Continuous (Note 1) 18 A D (Note 1a) 5.4 Drain Current – Pulsed 100 P Maximum Power Dissipation (Note 1) 42 W D (Note 1a) 3.8 (Note 1b) 1.6 T , T Operating and Storage Junction Temperature Range –55 to +175 J STG °C Thermal Characteristics Thermal Resistance, Junction-to-Case (Note 1) 3.5 R °C/W θJC R Thermal Resistance, Junction-to-Ambient (Note 1a) 40 °C/W θJA (Note 1b) 96 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDD5612 FDD5612 13’’ 16mm 2500 units 2001 FDD5612 REV. C1(W)
