FDD5353 ,60V N-Channel Power Trench?MOSFETGeneral Description Max r = 12.3mΩ at V = 10V, I = 10.7A This N-Channel MOSFET is produced usi ..
FDD5612 ,60V N-Channel PowerTrench MOSFETFeatures specifically to improve the overall efficiency of DC/DC converters using either synchronou ..
FDD5614 ,60V P-Channel PowerTrench MOSFETApplications• DC/DC converter • High performance trench technology for extremelylow RDS(ON)• Power ..
FDD5614P ,60V P-Channel PowerTrench MOSFETFeaturesThis 60V P-Channel MOSFET uses Fairchild’s high• –15 A, –60 V. R = 100 mΩ @ V = –10 VDS(ON ..
FDD5670 ,60V N-Channel PowerTrench MOSFETApplications• High performance trench technology for extremely• DC/DC converterlow RDS(ON)• Motor d ..
FDD5680 ,N-Channel, PowerTrench MOSFETApplications• High performance trench technology for extremelylow R .• DC/DC converterDS(on)• Motor ..
FN4A4M ,RESISTOR BUILT-IN TYPE PNP TRANSISTORDATA SHEETSILICON TRANSISTORFN4xxxRESISTOR BUILT-IN TYPE PNP TRANSISTOR
FDD5353
60V N-Channel Power Trench?MOSFET
® FDD5353 N-Channel Power Trench MOSFET March 2013 FDD5353 ® N-Channel Power Trench MOSFET 60V, 50A, 12.3mΩ Features General Description Max r = 12.3mΩ at V = 10V, I = 10.7A This N-Channel MOSFET is produced using Fairchild DS(on) GS D ® Semiconductor‘s advanced Power Trench process that has Max r = 15.4mΩ at V = 4.5V, I = 9.5A DS(on) GS D been especially tailored to minimize the on-state resistance and 100% UIL Tested yet maintain superior switching performance. RoHS Compliant Application Inverter Synchronous rectifier Primary switch D D G G S D-PAK TO-252 (TO-252) S MOSFET Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 60 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous T = 25°C 50 C I -Continuous T = 25°C (Note 1a) 11.5 A D A -Pulsed 100 E Single Pulse Avalanche Energy (Note 3) 253 mJ AS Power Dissipation T = 25°C 69 C P W D Power Dissipation T = 25°C (Note 1a) 3.1 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 1.8 θJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 40 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDD5353 FDD5353 D-PAK (TO-252) 13’’ 12mm 2500 units 1 ©2013 FDD5353 Rev.C1
