FDD4685_F085 ,P-Channel PowerTrench?MOSFET -40V, -32A, 35m?Features Typ r = 23mΩ at V = -10V, I = -8.4A InverterDS(on) GS D Typ r = 30mΩ ..
FDD5202P ,P-Channel/ Logic Level/ MOSFETApplications• DC/DC converter• Motor drives• L.D.O.SD GGSTO-252Do TA=25 C unless otherwise no ..
FDD5353 ,60V N-Channel Power Trench?MOSFETGeneral Description Max r = 12.3mΩ at V = 10V, I = 10.7A This N-Channel MOSFET is produced usi ..
FDD5612 ,60V N-Channel PowerTrench MOSFETFeatures specifically to improve the overall efficiency of DC/DC converters using either synchronou ..
FDD5614 ,60V P-Channel PowerTrench MOSFETApplications• DC/DC converter • High performance trench technology for extremelylow RDS(ON)• Power ..
FDD5614P ,60V P-Channel PowerTrench MOSFETFeaturesThis 60V P-Channel MOSFET uses Fairchild’s high• –15 A, –60 V. R = 100 mΩ @ V = –10 VDS(ON ..
FN1L4Z-T2B ,Compound transistorFEATURES
( PACKAGE DIMENSIONS ' I . I C
in millimeters . tii'r O Resistor Built-in TYPE B
2.83c0 ..
FN4A4M ,RESISTOR BUILT-IN TYPE PNP TRANSISTORDATA SHEETSILICON TRANSISTORFN4xxxRESISTOR BUILT-IN TYPE PNP TRANSISTOR
FDD4685_F085
P-Channel PowerTrench?MOSFET -40V, -32A, 35m?
® FDD4685_F085 P-Channel PowerTrench MOSFET December 2010 FDD4685_F085 ® P-Channel PowerTrench MOSFET -40V, -32A, 35mΩ Applications Features Typ r = 23mΩ at V = -10V, I = -8.4A Inverter DS(on) GS D Typ r = 30mΩ at V = -4.5V, I = -7A Power Supplies DS(on) GS D Typ Q = 19nC at V = -5V g(TOT) GS High performance trench technology for extremely low r DS(on) RoHS Compliant Qualified to AEC Q101 ©2010 1 FDD4685_F085 Rev. C
