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FDD45AN06LA0FAIRCHIILDN/a2500avai60V N-Channel PowerTrench MOSFET


FDD45AN06LA0 ,60V N-Channel PowerTrench MOSFETFDD45AN06LA0February 2004FDD45AN06LA0®N-Channel PowerTrench MOSFET60V, 22A, 45mΩ
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FDD45AN06LA0
60V N-Channel PowerTrench MOSFET
FDD45AN06LA0 February 2004 FDD45AN06LA0 ® N-Channel PowerTrench MOSFET 60V, 22A, 45mΩ Features Applications •r = 39mΩ (Typ.), V = 5V, I = 22A Motor / Body Load Control DS(ON) GS D Q (tot) = 8.3nC (Typ.), V = 5VABS Systems g GS Low Miller ChargePowertrain Management Low Q Body DiodeInjection Systems RR UIS Capability (Single Pulse and Repetitive Pulse)DC-DC converters and Off-line UPS Qualified to AEC Q101Distributed Power Architectures and VRMs Primary Switch for 12V and 24V systems Formerly developmental type 83535 DRAIN (FLANGE) D GATE G SOURCE TO-252AA S FDD SERIES MOSFET Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 60 V DSS V Gate to Source Voltage ±20 V GS Drain Current o 25 A Continuous (T = 25 C, V = 10V) C GS o Continuous (T = 25 C, V = 5V) 22 A C GS I D o Continuous (T = 100 C, V = 5V) 16 A C GS o o Continuous (T = 25 C, V = 5V, R = 52 C/W) 5.2 A A GS θJA Pulsed Figure 4 A E Single Pulse Avalanche Energy (Note 1) 15 mJ AS Power dissipation 55 W P D o o Derate above 25C0.37W/ C o T , T Operating and Storage Temperature -55 to 175 C J STG Thermal Characteristics o R Thermal Resistance Junction to Case TO-252 2.73 C/W θJC o R Thermal Resistance Junction to Ambient TO-252 100 C/W θJA 2 o R Thermal Resistance Junction to Ambient TO-252, 1in copper pad area 52 C/W θJA This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http:///products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. ©2004 FDD45AN06LA0 Rev. A
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