FDD3706 ,20V N-Channel PowerTrench MOSFETFDD3706/FDU3706FDD3706/FDU3706® ®PowerTrenchThis N-Channel MOSFET has been designed• 50 A, 20 VR = ..
FDD3860 ,100V N-Channel PowerTrench?MOSFETApplications DC-AC Conversion Synchronous RectifierD DGGSD-PAKTO-252(TO-252)SMOSFET Maximum Ratin ..
FDD4141_F085 ,-40V P-Channel PowerTrench?MOSFETApplications Inverter Power SuppliesSDGGSD-PAKTO-252D(TO-252)MOSFET Maximum Ratings T = 25°C unl ..
FDD4243 ,-40V P-Channel PowerTrench?MOSFETGeneral Description Max r = 44mΩ at V = -10V, I = -6.7AThis P-Channel MOSFET has been produced usi ..
FDD4243 ,-40V P-Channel PowerTrench?MOSFETapplications.DS(on) RoHS CompliantApplication Inverter Power SuppliesS DGGSD-PAKTO-252(TO-252)D ..
FDD4243_F085 ,40V P-Channel PowerTrench?MOSFETFeatures Typ r = 36mΩ at V = -10V, I = -6.7A InverterDS(on) GS D Typ r = 48mΩ ..
FN1L4L-T1B ,Compound transistorELECTRICAL CHARACTERISTICS (Ta = 25 "C)
CHARACTERISTIC SYMBOL . . ' . TEST CONDITIONS
' Colle ..
FN1L4M ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS(T8=25°C)
CHARACTERISTIC SYMBOL . . . TEST CONDITIONS
( Collector C ..
FN1L4M-T1B ,Compound transistorFEATURES
PAcKA.GE..PMFNsiONs . Resistors Built-in TYPE
In millimeters
C
28:02 B
FO.1 R1 1T2 47 ..
FN1L4M-T2B ,Compound transistorELECTRICAL CHARACTERISTICS(T8=25°C)
CHARACTERISTIC SYMBOL . . . TEST CONDITIONS
( Collector C ..
FN1L4Z ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLDFEATURES
( PACKAGE DIMENSIONS ' I . I C
in millimeters . tii'r O Resistor Built-in TYPE B
2.83c0 ..
FN1L4Z-T2B ,Compound transistorFEATURES
( PACKAGE DIMENSIONS ' I . I C
in millimeters . tii'r O Resistor Built-in TYPE B
2.83c0 ..
FDD3706
20V N-Channel PowerTrench MOSFET
FDD3706/FDU3706 FDD3706/FDU3706 Ò Ò PowerTrench This N-Channel MOSFET has been designed · 50 A, 20 VR = 9 m W @ V = 10 V specifically to improve the overall efficiency of DC/DC R = 11 m W @ V = 4.5 V converters using either synchronous or conventional R = 16 m W @ V = 2.5 V switching PWM controllers. It has been optimized forD low gate charge, low R, fast switching speed and extremely low R in a small package. · Low gate charge (16 · Fast Switching · DC/DC converter · High performance trench technology for extremely · Motor Drives DS(ON) D D G I-PAKG S (TO-251AA) TO-252 GDS S o T=25C unless otherwise notedA RatingsUnits VDrain-Source VoltageV VGate-Source Voltage ±V IContinuous Drain Current@TADC @T=25°CA Pulsed PWDPower Dissipation @TC @T=25°CA @T=25°C A T, TOperating and Storage Junction Temperature Range-55 to +175 °CJS Thermal Characteristics Thermal Resistance, Junction-to-Case R°C/W qJC RThermal Resistance, Junction-to-Ambient °C/W q RThermal Resistance, Junction-to-Ambient °C/W q Device MarkingPackageReel SizeTape widthQuantity FDD3706FDD3706D-PAK (TO-252)12mm2500 units FDU3706FDU3706I-PAK (TO-251) Ó B(W)FDD3706/FDU3706 Rev 2001 Fairchild Semiconductor Corp. 75N/ATube 13’’ Device Package Marking and Ordering Information JA 96(Note 1b) JA 45(Note 1a) 3.4(Note 1) TG 1.6(Note 1b) 3.8(Note 1a) 44(Note 3)=25°C 60(Note 1a) 14.7(Note 1a) 50(Note 3)=25°C GSS 12 DSS 20 ParameterSymbol Absolute Maximum Ratings (TO-252) D-PAK low R Applications nC)DS(ON) ( ON) DS GSS(ON) GSDS(ON) GSDS(ON) FeaturesGeneral Description MOSFET20V N-Channel PRELIMINARY August 2001
