FDD3570 ,80V N-Channel PowerTrench MOSFETfeatures faster switching and lower gatechange than other MOSFETs with comparable RDS(ON) • High pe ..
FDD3580 ,80V N-Channel PowerTrench MOSFETfeatures faster switching and lower gatechange than other MOSFETs with comparable R • Fast switchin ..
FDD3670 ,100V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 34 A, 100 V. R = 32 mΩ @ V = 10 V DS(ON) GSspeci ..
FDD3672 ,N-Channel UltraFET ?Trench MOSFET 100V, 44A, 28mOhmFDD3672June 2002FDD3672®N-Channel UltraFET Trench MOSFET100V, 44A, 28mΩ
FDD3682 ,N-Channel UltraFET ?Trench MOSFET 100V, 32A, 36mOhmFDD3682June 2002FDD3682®N-Channel UltraFET Trench MOSFET100V, 32A, 36mΩ
FDD3706 ,20V N-Channel PowerTrench MOSFETFDD3706/FDU3706FDD3706/FDU3706® ®PowerTrenchThis N-Channel MOSFET has been designed• 50 A, 20 VR = ..
FN1L3Z ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLDFEATURES
in millimeters ( O Resistor Built-in TYPE T C
B
2.8+,0.2 R1 = 4.7 k9
. _ R1 _
-0.15 C ..
FN1L3Z-T1B ,Compound transistorDATA SHEET
SILICON TRANSISTOR
MEDIUM SPEED SWITCHING
RESISTOR BUILT-IN TYPE PNP TRANSISTOR
..
FN1L3Z-T2B ,Compound transistorFEATURES
in millimeters ( O Resistor Built-in TYPE T C
B
2.8+,0.2 R1 = 4.7 k9
. _ R1 _
-0.15 C ..
FN1L4L ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25 "C)
CHARACTERISTIC SYMBOL . . ' . TEST CONDITIONS
' Colle ..
FN1L4L-T1B ,Compound transistorELECTRICAL CHARACTERISTICS (Ta = 25 "C)
CHARACTERISTIC SYMBOL . . ' . TEST CONDITIONS
' Colle ..
FN1L4M ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS(T8=25°C)
CHARACTERISTIC SYMBOL . . . TEST CONDITIONS
( Collector C ..
FDD3570
80V N-Channel PowerTrench MOSFET
FDD3570 November 2000 FDD3570 80V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed • 10 A, 80 V. R = 20 mΩ @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 23 mΩ @ V = 6 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers. • Fast switching speed This MOSFET features faster switching and lower gate change than other MOSFETs with comparable R DS(ON) • High performance trench technology for extremely specifications resulting in DC/DC power supply designs low R DS(ON) with higher overall efficiency. • High power and current handling capability D D G G S TO-252 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units VDSS Drain-Source Voltage 80 V V Gate-Source Voltage V GSS ± 20 I Maximum Drain Current-Continuous (Note 1) 43 A D (Note 1a) 10 Maximum Drain Current – Pulsed 110 o P Maximum Power Dissipation @T = 25 C (Note 1) 69 W D C o T = 25 C (Note 1a) 3.4 A o T = 25 C (Note 1b) 1.3 A TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C Thermal Characteristics Thermal Resistance, Junction-to- Case (Note 1) 1.8 RθJC °C/W R Thermal Resistance, Junction-to- Ambient (Note 1b) 96 °C/W θJA Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDD3570 FDD3570 13’’ 16mm 2500 2000 FDD3570 Rev C(W)
