FDD13AN06A0 ,N-Channel PowerTrench MOSFET, 60V, 50A, 0.0135Applications•r = 11.5mΩ (Typ.), V = 10V, I = 50A Motor / Body Load ControlDS(ON) GS DQ (tot) = 2 ..
FDD14AN06LA0 ,N-Channel Power Trench #174 MOSFET, 60V, 50A, 14mOhmsApplications•r = 12.8mΩ (Typ.), V = 5V, I = 50A Motor / Body Load ControlDS(ON) GS DQ (tot) = 25 ..
FDD16AN08A0 ,N-Channel UltraFET ?Trench MOSFET 75V, 50A, 16mOhmApplications•r = 13mΩ (Typ.), V = 10V, I = 50A 42V Automotive Load ControlDS(ON) GS DQ (tot) = 3 ..
FDD20AN06A0 ,N-Channel PowerTrench MOSFETApplications•r = 17mΩ (Typ.), V = 10V, I = 45A Motor / Body Load ControlDS(ON) GS DQ (tot) = 15n ..
FDD24AN06LA0 ,60V N-Channel Logic Level PowerTrench MOSFETApplications•r = 20mΩ (Typ.), V = 5V, I = 36A Motor / Body Load ControlDS(ON) GS DQ (tot) = 16nC ..
FDD2512 ,150V N-Channel PowerTrench TM MOSFETFeaturesThis N-Channel MOSFET has been designed• 6.7 A, 150 V R = 420 mΩ @ V = 10 VDS(ON) GSspecifi ..
FN1A4Z ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25 CC)
CHARACTERISTIC SYMBOL . . . TEST CONDITIONS
. Collect ..
FN1A4Z-T1B ,Compound transistorELECTRICAL CHARACTERISTICS (Ta = 25 CC)
CHARACTERISTIC SYMBOL . . . TEST CONDITIONS
. Collect ..
FN1F4M ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL . . . TEST CONDITIONS
Collector Cu ..
FN1F4M-T1B ,Compound transistorELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL . . . TEST CONDITIONS
Collector Cu ..
FN1F4N , MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLD
FN1F4N-T1B ,Compound transistorELECTRICAL CHARACTERISTICS (Ta = 25 oC)
_ CHARACTERISTIC SYMBOL MIN. 4 TYP. MAX. UNIT TEST CONDI ..
FDD13AN06A0
N-Channel PowerTrench MOSFET, 60V, 50A, 0.0135
FDD13AN06A0 July 2003 FDD13AN06A0 ® N-Channel PowerTrench MOSFET 60V, 50A, 13.5mΩ Features Applications •r = 11.5mΩ (Typ.), V = 10V, I = 50A Motor / Body Load Control DS(ON) GS D Q (tot) = 22nC (Typ.), V = 10VABS Systems g GS Low Miller ChargePowertrain Management Low Q Body DiodeInjection Systems RR UIS Capability (Single Pulse and Repetitive Pulse)DC-DC converters and Off-line UPS Qualified to AEC Q101Distributed Power Architectures and VRMs Primary Switch for 12V and 24V systems Formerly developmental type 82555 DRAIN (FLANGE) D GATE G SOURCE S TO-252AA FDD SERIES MOSFET Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 60 V DSS V Gate to Source Voltage ±20 V GS Drain Current o 50 A Continuous (T < 80 C, V = 10V) C GS I D o o Continuous (T = 25 C, V = 10V, R = 52 C/W) 9.9 A A GS θJA Pulsed Figure 4 A E Single Pulse Avalanche Energy ( Note 1) 56 mJ AS Power dissipation 115 W P D o o Derate above 25C0.77W/ C o T , T Operating and Storage Temperature -55 to 175 C J STG Thermal Characteristics o R Thermal Resistance Junction to Case TO-252 1.3 C/W θJC o R Thermal Resistance Junction to Ambient TO-252 100 C/W θJA 2 o R Thermal Resistance Junction to Ambient TO-252, 1in copper pad area 52 C/W θJA This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http:///products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. ©2003 FDD13AN06A0 Rev. A1
