FDD120AN15A0 ,N-Channel PowerTrench MOSFET, 150V, 14A, 0.120 OhmsApplications•r = 101mΩ (Typ.), V = 10V, I = 4A DC/DC Converters and Off-line UPSDS(ON) GS DQ (to ..
FDD13AN06A0 ,N-Channel PowerTrench MOSFET, 60V, 50A, 0.0135Applications•r = 11.5mΩ (Typ.), V = 10V, I = 50A Motor / Body Load ControlDS(ON) GS DQ (tot) = 2 ..
FDD14AN06LA0 ,N-Channel Power Trench #174 MOSFET, 60V, 50A, 14mOhmsApplications•r = 12.8mΩ (Typ.), V = 5V, I = 50A Motor / Body Load ControlDS(ON) GS DQ (tot) = 25 ..
FDD16AN08A0 ,N-Channel UltraFET ?Trench MOSFET 75V, 50A, 16mOhmApplications•r = 13mΩ (Typ.), V = 10V, I = 50A 42V Automotive Load ControlDS(ON) GS DQ (tot) = 3 ..
FDD20AN06A0 ,N-Channel PowerTrench MOSFETApplications•r = 17mΩ (Typ.), V = 10V, I = 45A Motor / Body Load ControlDS(ON) GS DQ (tot) = 15n ..
FDD24AN06LA0 ,60V N-Channel Logic Level PowerTrench MOSFETApplications•r = 20mΩ (Typ.), V = 5V, I = 36A Motor / Body Load ControlDS(ON) GS DQ (tot) = 16nC ..
FN1A4P-T1B ,Compound transistorFEATURES
PAcKAfE.PPiiNsioNs __' o Resistors Built-in TYPE
m millimeters
c
2.8K0.2 2 f B -
0. ..
FN1A4P-T2B ,Compound transistorELECTRICAL CHARACTERISTICS (Ta = 25 °C) N
CHARACTERISTIC SYMBOL . _ . . TEST CONDITIONS
Colle ..
FN1A4Z ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25 CC)
CHARACTERISTIC SYMBOL . . . TEST CONDITIONS
. Collect ..
FN1A4Z-T1B ,Compound transistorELECTRICAL CHARACTERISTICS (Ta = 25 CC)
CHARACTERISTIC SYMBOL . . . TEST CONDITIONS
. Collect ..
FN1F4M ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL . . . TEST CONDITIONS
Collector Cu ..
FN1F4M-T1B ,Compound transistorELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL . . . TEST CONDITIONS
Collector Cu ..
FDD120AN15A0
N-Channel PowerTrench MOSFET, 150V, 14A, 0.120 Ohms
FDP120AN15A0 / FDD120AN15A0 September 2002 FDP120AN15A0 / FDD120AN15A0 ® N-Channel PowerTrench MOSFET 150V, 14A, 120mΩ Features Applications •r = 101mΩ (Typ.), V = 10V, I = 4A DC/DC Converters and Off-line UPS DS(ON) GS D Q (tot) = 11.2nC (Typ.), V = 10VDistributed Power Architectures and VRMs g GS Low Miller ChargePrimary Switch for 24V and 48V Systems Low Qrr Body DiodeHigh Voltage Synchronous Rectifier UIS Capability (Single Pulse and Repetitive Pulse)Direct Injection / Diesel Injection Systems Qualified to AEC Q10142V Automotive Load Control Electronic Valve Train Systems Formerly developmental type 82845 DRAIN D (FLANGE) DRAIN SOURCE (FLANGE) GATE G DRAIN GATE SOURCE S TO-252AA TO-220AB FDD SERIES FDP SERIES MOSFET Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 150 V DSS V Gate to Source Voltage ±20 V GS Drain Current o 14 A Continuous (T = 25 C, V = 10V) C GS o I Continuous (T = 100 C, V = 10V) 9.7 A D C GS o o Continuous (T = 25 C, V = 10V) with R = 52 C/W 2.8 A amb GS θJA Pulsed Figure 4 A E Single Pulse Avalanche Energy (Note 1) 122 mJ AS Power dissipation 65 W P D o o Derate above 25C0.43W/ C o T , T Operating and Storage Temperature -55 to 175 C J STG Thermal Characteristics o R Thermal Resistance Junction to Case TO-252, TO-220 2.31 C/W θJC o R Thermal Resistance Junction to Ambient TO-252 100 C/W θJA o R Thermal Resistance Junction to Ambient TO-220 (Note 2) 62 C/W θJA 2 o R Thermal Resistance Junction to Ambient TO-252, 1in copper pad area 52 C/W θJA This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http:///products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. ©2002 FDP120AN15A0 / FDD120AN15A0 Rev. B
