FDC6901L ,Integrated Load SwitchApplications • Load switch • Power management D2S1D1G2S2TMSuperSOT -6G1Pin 1SuperSOT™-6 ..
FDC6901L ,Integrated Load SwitchFeatures This device is particularly suited for compact power • Three programmable slew rates man ..
FDC6901L ,Integrated Load Switchapplications with high capacitance loads. For turn-off, the IC pulls the MOSFET gate up quickly.
FDC697P ,P-Channel 1.8V PowerTrench MOSFETApplications low R DS(ON)• Fast switching speed • Battery management • Load Switch • FLMP SuperSOT ..
FDC699P ,P-Channel 2.5V Power Mosfet MOSFETApplications • FLMP SuperSOT-6 package: Enhanced thermal • Battery management performance in indus ..
FDC796N ,30V N-Channel PowerTrench MOSFETApplications • Low gate charge • DC/DC converter • High power and current handling capability • P ..
FN1A3Q ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLDDATA SH E ET
SILICON TRANSISTOR
FN1A30.
ttatc
ELECTRON DEVICE,
MEDIUM SPEED SWITCHIN ..
FN1A3Q-T1B ,Compound transistorDATA SH E ET
SILICON TRANSISTOR
FN1A30.
ttatc
ELECTRON DEVICE,
MEDIUM SPEED SWITCHIN ..
FN1A3Q-T2B ,Compound transistorELECTRICAL CHARACTERISTICS (Ta = 25 °c)
CHARACTiiRISTlC
SYMBOL
TEST CONDITIONS
Collecto ..
FN1A4M ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25 "ty
CHARACTERISTIC SYMBOL . . . TEST CONDITIONS
Collector ..
FN1A4M-T1B ,Compound transistorELECTRICAL CHARACTERISTICS (Ta = 25 "ty
CHARACTERISTIC SYMBOL . . . TEST CONDITIONS
Collector ..
FN1A4M-T2B ,Compound transistorFEATURES
PACKAGE DIMENSIONS ir,' o Resistors Built-in TYPE
in millimeters _ C
2.8k0.2 B
l, _ . ..
FDC6901L
Integrated Load Switch
FDC6901L May 2002 FDC6901L Integrated Load Switch General Description Features This device is particularly suited for compact power • Three programmable slew rates management. In portable electronic equipment where 2.5V • Reduces inrush current to 6V input capability is needed. This load switch integrates • Minimizes EMI a Slew Rate Control Driver that drives a P-Channel Power • Normal turn-off speed MOSFET in one tiny SuperSOT-6 package. The • Low-power CMOS operates over wide voltage range integrated slew rate control driver is specifically designed • High performance trench technology for extremely to control the turn on of the P-Channel MOSFET in order to low R DS(ON) limit the inrush current in battery switching applications with high capacitance loads. For turn-off, the IC pulls the MOSFET gate up quickly. Applications • Load switch • Power management D2 S1 D1 G2 S2 TM SuperSOT -6 G1 Pin 1 SuperSOT™-6 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Supply Voltage –0.5 to 10 V DD V DC Input Voltage (Logic Inputs) –0.7 to 6 V IN P Power Dissipation D T Storage Junction Temperature Range –55 to +150 °C STG Recommended Operating Range V Supply Voltage –0.5 to 10 V DD T Operating Junction Temperature –55 to +150 °C J Thermal Characteristics Thermal Resistance, Junction to Ambient 180 °C/W R θJA Thermal Resistance, Junction to Case 60 °C/W R θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape Width Quantity .901 FDC6901L 7” 8mm 3000 units FDC6901L Rev C (W) 2002
