FDC658AP ,-30V Single P-Channel Logic Level PowerTrench?MOSFETFeaturesThis P-Channel Logic Level MOSFET is produced using Max r = 50 m @ V = -10 V, I = -4AF ..
FDC658P ,Single P-Channel, Logic Level, PowerTrench TM MOSFETGeneral Description MOSFET Logic Level,8P DC65 (TAV µ A Vo oI C CΔ ..
FDC658P_NL ,Single P-Channel Logic Level PowerTrench MOSFETGeneral Description MOSFET Logic Level,8P DC65 (TAV µ A Vo oI C CΔ ..
FDC6901L ,Integrated Load SwitchApplications • Load switch • Power management D2S1D1G2S2TMSuperSOT -6G1Pin 1SuperSOT™-6 ..
FDC6901L ,Integrated Load SwitchFeatures This device is particularly suited for compact power • Three programmable slew rates man ..
FDC6901L ,Integrated Load Switchapplications with high capacitance loads. For turn-off, the IC pulls the MOSFET gate up quickly.
FMY3A , Power Management(Dual Transistors)
FMY4A , Collector-emitter voltage: Tr1=-50V,Tr2=50V, Collector current: Tr1=-150mA,Tr2=150mA
FMY4A , Collector-emitter voltage: Tr1=-50V,Tr2=50V, Collector current: Tr1=-150mA,Tr2=150mA
FN1A3Q ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLDDATA SH E ET
SILICON TRANSISTOR
FN1A30.
ttatc
ELECTRON DEVICE,
MEDIUM SPEED SWITCHIN ..
FN1A3Q-T1B ,Compound transistorDATA SH E ET
SILICON TRANSISTOR
FN1A30.
ttatc
ELECTRON DEVICE,
MEDIUM SPEED SWITCHIN ..
FN1A3Q-T2B ,Compound transistorELECTRICAL CHARACTERISTICS (Ta = 25 °c)
CHARACTiiRISTlC
SYMBOL
TEST CONDITIONS
Collecto ..
FDC658AP
-30V Single P-Channel Logic Level PowerTrench?MOSFET
® FDC658AP Single P-Channel Logic Level PowerTrench MOSFET November 2011 FDC658AP ® Single P-Channel Logic Level PowerTrench MOSFET -30V, -4A, 50m� General Description Features This P-Channel Logic Level MOSFET is produced using � Max r = 50 m� @ V = -10 V, I = -4A Fairchild's advanced PowerTrench process. It has been DS(on) GS D optimized for battery power management applications. � Max r = 75 m� @ V = -4.5 V, I = -3.4A DS(on) GS D Applications � Low Gate Charge � High performance trench technology for extremely low � Battery management r DS(on) � Load switch � RoHS Compliant � Battery protection � DC/DC conversion S D 1 6 D 2 5 G D D 3 4 PIN 1 TM SuperSOT -6 Absolute Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage -30 V DS V Gate-Source Voltage �25 V GS Drain Current - Continuous -4 (Note 1a) I A D -20 - Pulsed Maximum Power dissipation 1.6 (Note 1a) P W D 0.8 (Note 1b) T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W �JA R Thermal Resistance, Junction-to-Case (Note 1) 30 °C/W �JC Package Marking and Ordering Information Device Marking Device Reel Size Tape Width Quantity .58A FDC658AP 7inch 8mm 3000 units ©2011 1 FDC658AP Rev. B1
