FDC655BN ,Single N-Channel, Logic Level, PowerTrench MOSFETGeneral Description 6.3 A, 30 V. This N-Channel Logic Level MOSFET is produced using Fair-R = 25 mΩ ..
FDC6561 ,Dual N-Channel Logic Level PowerTrenchTM MOSFETGeneral Description MOSFET Logic Level DC6561AN (TAV µ A Vo oI C ..
FDC6561AN ,Dual N-Channel Logic Level PowerTrench TM MOSFETGeneral Description MOSFET Logic Level DC6561AN (TAV µ A Vo oI C ..
FDC658AP ,-30V Single P-Channel Logic Level PowerTrench?MOSFETFeaturesThis P-Channel Logic Level MOSFET is produced using Max r = 50 m @ V = -10 V, I = -4AF ..
FDC658P ,Single P-Channel, Logic Level, PowerTrench TM MOSFETGeneral Description MOSFET Logic Level,8P DC65 (TAV µ A Vo oI C CΔ ..
FDC658P_NL ,Single P-Channel Logic Level PowerTrench MOSFETGeneral Description MOSFET Logic Level,8P DC65 (TAV µ A Vo oI C CΔ ..
FMX-G16S , Ultra-Fast-Recovery Rectifier Diodes
FMX-G22S , Ultra-Fast-Recovery Rectifier Diodes
FMX-G26S , Ultra-Fast-Recovery Rectifier Diodes
FMY3A , Power Management(Dual Transistors)
FMY4A , Collector-emitter voltage: Tr1=-50V,Tr2=50V, Collector current: Tr1=-150mA,Tr2=150mA
FMY4A , Collector-emitter voltage: Tr1=-50V,Tr2=50V, Collector current: Tr1=-150mA,Tr2=150mA
FDC655BN
Single N-Channel, Logic Level, PowerTrench MOSFET
® FDC655BN Single N-Channel, Logic Level, PowerTrench MOSFET April 2005 FDC655BN ® Single N-Channel, Logic Level, PowerTrench MOSFET Features General Description ■ 6.3 A, 30 V. This N-Channel Logic Level MOSFET is produced using Fair- R = 25 mΩ @ V = 10 V child Semiconductor’s advanced PowerTrench process that has DS(ON) GS R = 33 mΩ @ V = 4.5 V been especially tailored to minimized on-state resistance and DS(ON) GS yet maintain superior switching performance. ■ Fast switching ■ Low gate charge These devices are well suited for low voltage and battery pow- ered applications where low in-line power loss and fast switch- ■ High performance trench technology for extremely low Rdson ing are required. S D 1 6 D 2 5 G D TM D SuperSOT-6 3 4 Absolute Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage ±20 V GSS I Drain Current – Continuous (Note 1a) 6.3 A D – Pulsed 20 P Maximum Power Dissipation (Note 1a) 1.6 W D (Note 1b) 0.8 T , T Operating and Storage Junction Temperature Range – 55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W θJA R Thermal Resistance, Junction-to-Case (Note 1) 30 °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .55B FDC655BN 7’’ 8mm 3000 units ©2005 1 FDC655BN Rev. C(W) 55B
