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FDC6401NFAIN/a3471avaiDual N-Channel 2.5V Specified PowerTrench MOSFET
FDC6401NFAIRCHILN/a1230avaiDual N-Channel 2.5V Specified PowerTrench MOSFET
FDC6401NFAIRCHILDN/a3000avaiDual N-Channel 2.5V Specified PowerTrench MOSFET


FDC6401N ,Dual N-Channel 2.5V Specified PowerTrench MOSFETApplicationsON)DS(nC)GSDS(ON)GSDS(ON)
FDC6401N ,Dual N-Channel 2.5V Specified PowerTrench MOSFETGeneral Description MOSFETPowerTrenchOctober 2001FDC6401N
FDC6401N ,Dual N-Channel 2.5V Specified PowerTrench MOSFETFDC6401NFDC6401N® ®Dual N-Channel 2.5V Specified This Dual N-Channel MOSFET has been designed• 3.0 ..
FDC6401N_NL ,Dual N-Channel 2.5V Specified PowerTrench MOSFETFDC6401NFDC6401N® ®Dual N-Channel 2.5V Specified This Dual N-Channel MOSFET has been designed• 3.0 ..
FDC640P ,P-Channel 2.5V PowerTrench Specified MOSFETFeaturesThis P-Channel 2.5V specified MOSFET uses a rugged• –4.5 A, –20 V R = 0.053 Ω @ V = –4.5 V ..
FDC640P_NL ,P-Channel 2.5V PowerTrench Specified MOSFETFeaturesThis P-Channel 2.5V specified MOSFET uses a rugged• –4.5 A, –20 V R = 0.053 Ω @ V = –4.5 V ..
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FDC6401N
Dual N-Channel 2.5V Specified PowerTrench MOSFET
FDC6401N FDC6401N Ò Ò Dual N-Channel 2.5V Specified This Dual N-Channel MOSFET has been designed · 3.0 A, 20 V.R = 70 m W @ V = 4.5 V specifically to improve the overall efficiency of DC/DC R = 95 m W @ V = 2.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for · Low gate charge (3.3 low gate charge, low R and fast switching speed. · High performance trench technology for extremely DS(ON) · DC/DC converter · High power and current handling capability · Battery Protection · Power Management D2 43 D1 52 G2 61 SuperSOT -6 G1 o T=25C unless otherwise notedA RatingsUnits VDrain-Source VoltageV VGate-Source Voltage ±V IDrain Current– ContinuousAD – Pulsed PPower Dissipation for Single OperationWD (Note 1c) T, TOperating and Storage Junction Temperature Range–55 to +150 °CJ Thermal Characteristics RThermal Resistance, Junction-to-Ambient °C/W q RThermal Resistance, Junction-to-Case °C/W qJC Device MarkingReel SizeTape widthQuantity FDC6401N3000 units Ó FDC6401N Rev C (W)2001 8mm7’’.401 Device Package Marking and Ordering Information 60(Note 1) JA 130(Note 1a) STG 0.7 0.9 (Note 1b) 0.96(Note 1a) 12 3.0(Note 1a) 12GSS DSS 20 ParameterSymbol Absolute Maximum Ratings TM S2 S1 low R Applications ON)DS( nC) GSDS(ON) GSDS(ON) FeaturesGeneral Description MOSFETPowerTrench October 2001
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