FDC636P ,P-Channel Logic Level Enhancement Mode Field Effect TransistorELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ASymbol Parameter Conditions Min Typ Ma ..
FDC637AN ,Single N-Channel, 2.5V Specified PowerTrench TM MOSFETFeaturesThis N-Channel 2.5V specified MOSFET is produced 6.2 A, 20 V. R = 0.024 Ω @ V = 4.5 Vusing ..
FDC637BNZ ,20V N-Channel 2.5V Specified PowerTrench?MOSFETGeneral Description Max r = 24mΩ at V = 4.5V, I = 6.2A This N-Channel 2.5V specified MOSFET is pro ..
FDC638APZ ,-20V P-Channel 2.5V PowerTrench?Specified MOSFETGeneral Description Max r = 43mΩ at V = –4.5V, I = –4.5AThis P-Channel 2.5V specified MOSFET is pr ..
FDC638P ,P-Channel 2.5V PowerTrench Specified MOSFETFeatures This P -Channel 2.5V specified MOSFET is produced • –4.5 A, –20 V. R = 48 mΩ @ V = –4.5 V ..
FDC638P_NL ,Single P-Channel 2.5V Specified PowerTrench MOSFETapplications: load switching and power management, low R DS(ON)battery charging circuits, and DC/DC ..
FMV-3FU , Damper Diode (Diode modulation for TV)
FMV-3GU , Damper Diode (Diode modulation for TV)
FMV-3GU , Damper Diode (Diode modulation for TV)
FMW-24H , Schottky Barrier Diodes
FMX-12S , Ultra-Fast-Recovery Rectifier Diodes
FMX-12S , Ultra-Fast-Recovery Rectifier Diodes
FDC636P
P-Channel Logic Level Enhancement Mode Field Effect Transistor
May 1998 FDC636P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power -2.8 A, -20 V. R = 0.130 W @ V = -4.5 V DS(ON) GS field effect transistors are produced using Fairchild's R = 0.180 W @ V = -2.5 V. DS(ON) GS proprietary, high cell density, DMOS technology. This very TM high density process is especially tailored to minimize SuperSOT -6 package design using copper lead frame for superior thermal and electrical capabilities. on-state resistance. These devices are particularly suited for low voltage applications such as cellular phone and High density cell design for extremely low R . DS(ON) notebook computer power management and other battery powered circuits where high-side switching, and low in-line Exceptional on-resistance and maximum DC current power loss are needed in a very small outline surface capability. mount package. TM TM SuperSOT -6 SOT-223 SOIC-16 SOT-23 SuperSOT -8 SO-8 S 1 6 D D 2 5 G 3 3 4 D pin 1 TM D SuperSOT -6 Absolute Maximum RatingsT = 25°C unless otherwise noted A Symbol Parameter FDC636P Units V Drain-Source Voltage -20 V DSS V Gate-Source Voltage ±8 V GSS I Drain Current - Continuous (Note 1a) -2.8 A D - Pulsed -11 Maximum Power Dissipation (Note 1a) 1.6 W P D (Note 1b) 0.8 T ,T Operating and Storage Temperature Range -55 to 150 °C J STG THERMAL CHARACTERISTICS R Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W qJA R Thermal Resistance, Junction-to-Case (Note 1) 30 °C/W qJC FDC636P Rev.B © 1998 .636
