FDC6306P ,Dual P-Channel 2.5V Specified PowerTrench TM MOSFETGeneral DescriptionThese P-Channel 2.5V specified MOSFETs are produced• -1.9 A, -20 V. R = 0.170 Ω ..
FDC6308P ,Dual P-Channel 2.5V Specific PowerTrench TM MOSFET ..
FDC6310P ,Dual P-Channel 2.5V Specified PowerTrench MOSFETFeatures These P-Channel 2.5V specified MOSFETs are • –2.2 A, –20 V. R = 125 mΩ @ V = –4.5 V DS(ON) ..
FDC6310P ,Dual P-Channel 2.5V Specified PowerTrench MOSFETApplications • SuperSOT TM -6 package: small footprint 72% smaller than standard SO-8); low profile ..
FDC6312P ,Dual P-Channel 1.8V PowerTrench Specified MOSFETFeaturesThese P-Channel 1.8V specified MOSFETs are• –2.3 A, –20 V. R = 115 mΩ @ V = –4.5 VDS(ON) GS ..
FDC6318P ,Dual P-Channel 1.8V PowerTrench Specified MOSFETApplications low R DS(ON)• Power management TM• SuperSOT -6 package: small footprint (72% • Load sw ..
FMS6419MSA28 ,Selectable RGB (YUV) HD/SD Video Filter Driver with Y, C, Composite Outputsapplications. This part consists of a triple 6th order • 2:1 Mux inputs for multiple RGB/YUV input ..
FMS6419MSA28X ,Selectable RGB (YUV) HD/SD Video Filter Driver with Y, C, Composite OutputsFeatures Description• Three channel video reconstruction filters The FMS6419 offers comprehensive fil ..
FMS6501 ,12 Input 9 Output Video Switch Matrix with Input Clamp, Input Bias Circuitry, and Output DriversFMS6501 12 Input 9 Output Video Switch Matrix with Input Clamp, Input Bias Circuitry, and Output D ..
FMS6501MSA28 ,12 Input 9 Output Video Switch Matrix with Input Clamp, Input Bias Circuitry, and Output DriversFMS6501 12 Input 9 Output Video Switch Matrix with Input Clamp, Input Bias Circuitry, and Output D ..
FMS6501MSA28X ,12 Input 9 Output Video Switch Matrix with Input Clamp, Input Bias Circuitry, and Output DriversFeatures Description 12 x 9 Crosspoint Matrix The FMS6501 provides 12 inputs which can be routed to ..
FMS6502 ,8 Input, 6 Output Video Switch Matrix with Output DriversFeatures Description 8 x 6 Crosspoint Switch Matrix The FMS6502 provides eight inputs that can be r ..
FDC6306P
Dual P-Channel 2.5V Specified PowerTrench TM MOSFET
FDC6306P February 1999 FDC6306P Dual P-Channel 2.5V Specified PowerTrench MOSFET Features General Description These P-Channel 2.5V specified MOSFETs are produced • -1.9 A, -20 V. R = 0.170 Ω @ V = -4.5 V DS(on) GS using Fairchild Semiconductor's advanced PowerTrench R = 0.250Ω @ V = -2.5 V DS(on) GS process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for • Low gate charge (3 nC typical). superior switching performance. • Fast switching speed. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications • High performance trench technology for extremely where the bigger more expensive SO-8 and TSSOP-8 low R . DS(ON) packages are impractical. TM • SuperSOT -6 package: small footprint (72% smaller Applications than standard SO-8); low profile (1mm thick). • Load switch • Battery protection • Power management D2 S1 4 3 D1 2 5 G2 S2 TM 1 6 SuperSOT -6 G1 T = 25°C unless otherwise noted Absolute Maximum Ratings A Symbol Parameter Ratings Units V Drain-Source Voltage -20 V DSS V Gate-Source Voltage 8V GSS ± I Drain Current - Continuous (Note 1a) -1.9 A D - Pulsed -5 P Power Dissipation for Single Operation (Note 1a) 0.96 W D (Note 1b) 0.9 (Note 1c) 0.7 T , T Operating and Storage Junction Temperature Range -55 to +150 C J stg ° Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 130 C/W JA ° θ (Note 1) R Thermal Resistance, Junction-to-Case 60 C/W JC ° θ Package Outlines and Ordering Information Device Marking Device Reel Size Tape Width Quantity FDC6306P 7’’ 8mm 3000 units 306 . 1999 FDC6306P Rev. C
