FDC610PZ ,-30V P-Channel PowerTrench?MOSFETapplications: High performance trench technology for extremely low rDS(on).load switching ..
FDC610PZ ,-30V P-Channel PowerTrench?MOSFET®FDC610PZ P-Channel PowerTrench MOSFETAugust 2007FDC610PZ ..
FDC610PZ ,-30V P-Channel PowerTrench?MOSFETGeneral Description Max r = 42mΩ at V = –10V, I = –4.9AThis P-Channel MOSFET is produced using Fai ..
FDC6301 ,Dual N-Channel / Digital FETElectrical Characteristics (T = 25 C unless otherwise noted )ASymbol Parameter Conditions Min Typ M ..
FDC6301N ,Dual N-Channel , Digital FETElectrical Characteristics (T = 25°C unless otherwise noted)AZero Input Voltage Output CurrentI V = ..
FDC6301N_NL ,Dual N-Channel, Digital FETElectrical Characteristics (T = 25 C unless otherwise noted )ASymbol Parameter Conditions Min Typ M ..
FMS6413 ,Single Channel Video Driver with Integrated Filter and Clampapplications robust and stable under all stated load and input conditions. with AC coupled input an ..
FMS6413CS ,Single Channel 75 Ohm Cable Driver-FilterApplications2Vp-p into an AC coupled 150Ω load with up to 35pF of • CCTVload capacitance at the out ..
FMS6413CSX ,Single Channel 75 Ohm Cable Driver-Filterapplications. This part consists of a 4 order video Low 150Ω . Pass filter for video filtering. Thi ..
FMS6413CSX ,Single Channel 75 Ohm Cable Driver-FilterBlock Diagram SYNC STRIP,REFERENCE,AND TIMINGx2 VIDEO_OUTVIDEO_INgM1VREV. 1.0.2 6/27/02 FM ..
FMS6414CS ,Dual Channel Video Drivers with Integrated Filtersapplications with AC coupled input and stated load and input conditions. Capacitive bypassing VCC A ..
FMS6414CS ,Dual Channel Video Drivers with Integrated FiltersBlock DiagramSYNC STRIP,REF, AND TIMINGYIN YOUT1 8x2gM1V2 7NC (Reserved) VCC_VIDEOFMS64143 6GND_VID ..
FDC610PZ
-30V P-Channel PowerTrench?MOSFET
® FDC610PZ P-Channel PowerTrench MOSFET August 2007 FDC610PZ tm ® P-Channel PowerTrench MOSFET –30V, –4.9A, 42mΩ Features General Description Max r = 42mΩ at V = –10V, I = –4.9A This P-Channel MOSFET is produced using Fairchild DS(on) GS D ® Semiconductor’s advanced PowerTrench process that has Max r = 75mΩ at V = –4.5V, I = –3.7A DS(on) GS D been especially tailored to minimize the on-state resistance and Low gate charge (17nC typical). yet maintain low gate charge for superior switching performance. These devices are well suited for battery power applications: High performance trench technology for extremely low r DS(on). load switching and power management, battery charging TM SuperSOT –6 package: small footprint (72% smaller than circuits, and DC/DC conversion. standard SO–8) low profile (1mm thick). Application RoHS Compliant DC - DC Conversion S D D D 6 1 D D D 5 2 G D S G 3 4 D 3 Pin 1 TM SuperSOT -6 MOSFET Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage –30 V DS V Gate to Source Voltage ±25 V GS Drain Current -Continuous (Note 1a) –4.9 I A D -Pulsed –20 Power Dissipation (Note 1a) 1.6 P W D Power Dissipation (Note 1b) 0.8 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Ambient (Note 1a) 78 θJA °C/W R Thermal Resistance, Junction to Ambient (Note 1b) 156 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity .610Z FDC610PZ SSOT6 7’’ 8mm 3000units 1 ©2007 FDC610PZ Rev.B
