FDC608PZ ,-20V P-Channel 2.5V PowerTrench?Specified MOSFETapplications: load switching and power management, low R DS(ON)battery power circuits, and DC/DC c ..
FDC608PZ ,-20V P-Channel 2.5V PowerTrench?Specified MOSFETFeatures This P-Channel 2.5V specified MOSFET is produced • –5.8 A, –20 V. R = 30 mΩ @ V = –4.5 V ..
FDC610PZ ,-30V P-Channel PowerTrench?MOSFETapplications: High performance trench technology for extremely low rDS(on).load switching ..
FDC610PZ ,-30V P-Channel PowerTrench?MOSFET®FDC610PZ P-Channel PowerTrench MOSFETAugust 2007FDC610PZ ..
FDC610PZ ,-30V P-Channel PowerTrench?MOSFETGeneral Description Max r = 42mΩ at V = –10V, I = –4.9AThis P-Channel MOSFET is produced using Fai ..
FDC6301 ,Dual N-Channel / Digital FETElectrical Characteristics (T = 25 C unless otherwise noted )ASymbol Parameter Conditions Min Typ M ..
FMS6410CSX ,Dual Channel Video Drivers with Integrated Filters and Composite Video SummerBlock DiagramSYNC STRIP, REF,AND TIMING1 YOUT 8YIN6dBgM1V2 7DNC VCC_VIDEO(Do Not Connect)FMS6410CVO ..
FMS6413 ,Single Channel Video Driver with Integrated Filter and Clampapplications robust and stable under all stated load and input conditions. with AC coupled input an ..
FMS6413CS ,Single Channel 75 Ohm Cable Driver-FilterApplications2Vp-p into an AC coupled 150Ω load with up to 35pF of • CCTVload capacitance at the out ..
FMS6413CSX ,Single Channel 75 Ohm Cable Driver-Filterapplications. This part consists of a 4 order video Low 150Ω . Pass filter for video filtering. Thi ..
FMS6413CSX ,Single Channel 75 Ohm Cable Driver-FilterBlock Diagram SYNC STRIP,REFERENCE,AND TIMINGx2 VIDEO_OUTVIDEO_INgM1VREV. 1.0.2 6/27/02 FM ..
FMS6414CS ,Dual Channel Video Drivers with Integrated Filtersapplications with AC coupled input and stated load and input conditions. Capacitive bypassing VCC A ..
FDC608PZ
-20V P-Channel 2.5V PowerTrench?Specified MOSFET
FDC608PZ June 2006 tm FDC608PZ ® P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced • –5.8 A, –20 V. R = 30 mΩ @ V = –4.5 V DS(ON) GS using Fairchild Semiconductor’s advanced R = 43 mΩ @ V = –2.5 V DS(ON) GS PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain • Low Gate Charge low gate charge for superior switching performance. • High performance trench technology for extremely These devices are well suited for battery power applications: load switching and power management, low R DS(ON) battery power circuits, and DC/DC conversions. TM • SuperSOT –6 package: small footprint (72% smaller than standard SO–8) low profile (1mm thick). S D 1 6 D 2 5 G D 3 4 TM D SuperSOT -6 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage –20 V DSS V Gate-Source Voltage V GSS ±12 I Drain Current – Continuous (Note 1a) –5.8 A D – Pulsed –20 P Maximum Power Dissipation (Note 1a) 1.6 W D (Note 1b) 0.8 T , T Operating and Storage Junction Temperature Range –55 to +150 J STG °C Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 78 R °C/W θJA R Thermal Resistance, Junction-to-Case (Note 1) 30 °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .608Z FDC608PZ 7’’ 8mm 3000 units FDC608PZ Rev B (W) ©2006
