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FDC6000NZFAIRCHILN/a440avaiDual N-Channel 2.5V Specified PowerTrench MOSFET


FDC6000NZ ,Dual N-Channel 2.5V Specified PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions Min Ty ..
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FDC6000NZ
Dual N-Channel 2.5V Specified PowerTrench MOSFET
FDC6000NZ June 2004 FDC6000NZ  Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged • 6.5 A, 20 V R = 20 mΩ @ V = 4.5 V DS(ON) GS gate version of Fairchild's Semiconductor’s advanced R = 28 mΩ @ V = 2.5 V DS(ON) GS PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Packaged in FLMP SSOT-6, the R and thermal properties of the device are DS(ON) • ESD protection diode (note 3) optimized for battery power management applications. • High performance trench technology for extremely Applications low R DS(ON) • Battery management/Charger Application • FLMP SSOT-6 package: Enhanced thermal • Load switch performance in industry-standard package size Bottom Drain Contact S2 S2 4 3 S1 S1 G1 G1 2 5 G2 G2 S2 S2 1 6 S1 S1 TM TM S Super uperS SO OT T-6 -6 FLM FLMP P Bottom Drain Contact o MOSFET Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 20 V DSS V Gate-Source Voltage ±12 V GSS I Drain Current – Continuous (Note 1a) 7.3 A D – Pulsed 20 P Power Dissipation for Dual Operation (Note 1a) 1.6 W D Power Dissipation for Single Operation (Note 1a) 1.8 (Note 1b) 1.2 T , T Operating and Storage Junction Temperature Range –55 to +150 J STG °C Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 68 R °C/W θJA Thermal Resistance, Junction-to-Case (Note 1a) 1 R θJc Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .0NZ FDC6000NZ 7’’ 8mm 3000 units FDC6000NZ Rev E1 (W) 2004
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