FDC365P ,-35V P-Channel Power Trench?MOSFETApplications Inverter Power SuppliesSDD 1 6 DDD 2 5 DGDG 4 S3Pin 1DTMSuperSOT -6MOSFET Maximum Ra ..
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FDC365P
-35V P-Channel Power Trench?MOSFET
® FDC365P P-Channel PowerTrench MOSFET November 2007 FDC365P tm ® P-Channel PowerTrench MOSFET -35V, -4.3A, 55mΩ Features General Description Max r = 55mΩ at V = -10V, I = -4.2A This P-Channel MOSFET has been produced using Fairchild DS(on) GS D ® Semiconductor’s proprietary PowerTrench technology to Max r = 80mΩ at V = -4.5V, I = -3.2A DS(on) GS D deliver low r and optimized Bvdss capability to offer DS(on) RoHS Compliant superior performance benefit in the applications. Applications Inverter Power Supplies S D D 1 6 D D D 2 5 D G D G 4 S 3 Pin 1 D TM SuperSOT -6 MOSFET Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage -35 V DS V Gate to Source Voltage ±20 V GS -Continuous (Note 1a) -4.3 I A D -Pulsed -20 Power Dissipation (Note 1a) 1.6 P W D Power Dissipation (Note 1b) 0.8 T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Ambient (Note 1a) 78 θJA °C/W R Thermal Resistance, Junction to Ambient (Note 1b) 156 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity .365P FDC365P SSOT6 7’’ 8mm 3000 units ©2007 1 FDC365P Rev.C
