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FDB8447LFSCN/a800avai40V 40V N-Channel PowerTrench?MOSFET


FDB8447L ,40V 40V N-Channel PowerTrench?MOSFETGeneral Description„ Max r = 8.5mΩ at V = 10V, I = 14AThis N-Channel MOSFET has been produced using ..
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FDB8447L
40V 40V N-Channel PowerTrench?MOSFET
® FDB8447L 40V N-Channel PowerTrench MOSFET February 2007 FDB8447L ® 40V N-Channel PowerTrench MOSFET 40V, 50A, 8.5mΩ Features General Description „ Max r = 8.5mΩ at V = 10V, I = 14A This N-Channel MOSFET has been produced using Fairchild DS(on) GS D ® Semiconductor’s proprietary PowerTrench technology to „ Max r = 11mΩ at V = 4.5V, I = 11A DS(on) GS D deliver low r and optimized BV capability to offer DS(on) DSS „ Fast Switching superior performance benefit in the application. „ RoHS Compliant Application „ Inverter „ Power Supplies D D G G S TO-263AB S FDB Series MOSFET Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 40 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous (Package limited) T = 25°C 50 C -Continuous (Silicon limited) T = 25°C (Note 1) 66 C I A D -Continuous T = 25°C (Note 1a) 15 A -Pulsed 100 E Drain-Source Avalanche Energy (Note 3) 153 mJ AS Power Dissipation T = 25°C 60 C P W D Power Dissipation (Note 1a) 3.1 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case (Note 1) 2.1 θJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 40 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDB8447L FDB8447L TO-263AB 330mm 24mm 800 units 1 ©2007 FDB8447L Rev.C
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