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FDB7030BL_NL |FDB7030BLNLFAIRCHILDN/a185avaiN-Channel Logic Level PowerTrench MOSFET


FDB7030BL_NL ,N-Channel Logic Level PowerTrench MOSFETFeaturesThis N-Channel Logic Level MOSFET has been• 60 A, 30 V R = 9 mΩ @ V = 10 VDS(ON) GSdesigne ..
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FDB7030BL_NL
N-Channel Logic Level PowerTrench MOSFET
FDP7030BL/FDB7030BL October 2003 FDP7030BL/FDB7030BL Ò N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET has been · 60 A, 30 V R = 9 mW @ V = 10 V DS(ON) GS designed specifically to improve the overall efficiency of R = 12 mW @ V = 4.5 V DS(ON) GS DC/DC converters using either synchronous or conventional switching PWM controllers. · Critical DC electrical parameters specified at These MOSFETs feature faster switching and lower elevated temperature gate charge than other MOSFETs with comparable R specifications. DS(ON) · High performance trench technology for extremely low R DS(ON) The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. · 175°C maximum junction temperature rating It has been optimized for low gate charge, low R DS(ON) and fast switching speed. D D G G G S TO-220 TO-263AB D FDP Series FDB Series S S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage V GSS ± 20 I Drain Current – Continuous (Note 1) 60 A D – Pulsed (Note 1) 180 P D Total Power Dissipation @ T = 25°C 60 W C 0.4 Derate above 25°C W/°C T , T Operating and Storage Junction Temperature Range –65 to +175 J STG °C Thermal Characteristics R Thermal Resistance, Junction-to-Case 2.5 qJC °C/W R qJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDB7030BL FDB7030BL 13’’ 24mm 800 units FDP7030BL FDP7030BL Tube n/a 45 Ó2003 FDP7030BL/FDB7030BL Rev D1(W)
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