IC Phoenix
 
Home ›  FF6 > FDB6676S,30V N-Channel PowerTrench SyncFET TM
FDB6676S Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
FDB6676SFAIRCHILN/a25000avai30V N-Channel PowerTrench SyncFET TM


FDB6676S ,30V N-Channel PowerTrench SyncFET TMFeatures This MOSFET is designed to replace a single MOSFET • 38 A, 30 V. R = 6.5 mΩ @ V = 10 V DS( ..
FDB6690S ,30V N-Channel PowerTrench SyncFETFeatures This MOSFET is designed to replace a single MOSFET • 21 A, 30 V. R = 15.5 mΩ @ V = 10 V DS ..
FDB7030BL ,N-Channel Logic Level PowerTrench ?MOSFETGeneral Description
FDB7030BL_NL ,N-Channel Logic Level PowerTrench MOSFETFeaturesThis N-Channel Logic Level MOSFET has been• 60 A, 30 V R = 9 mΩ @ V = 10 VDS(ON) GSdesigne ..
FDB7030BLS ,30V N-Channel PowerTrench SyncFETFeatures This MOSFET is designed to replace a single MOSFET • 56 A, 30 V. R = 10.5 mΩ @ V = 10 V DS ..
FDB7030L ,N-Channel Logic Level Enhancement Mode Field Effect TransistorGeneral Description
FMMTA55 , SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS
FMMZ5245 , SOT23 SILICON VOLTAGE REGULATOR DIODES
FMN-2206S , Silicon Diode
FMN-G12S , Ultra-Fast-Recovery Rectifier Diodes
FMN-G12S , Ultra-Fast-Recovery Rectifier Diodes
FMP-2FUR , Damper diode (Diode modulation for Displays)


FDB6676S
30V N-Channel PowerTrench SyncFET TM
FDP6676S/FDB6676S October 2001 FDP6676S / FDB6676S     ™ 30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET • 38 A, 30 V. R = 6.5 mΩ @ V = 10 V DS(ON) GS and parallel Schottky diode in synchronous DC:DC R = 8.0 mΩ @ V = 4.5 V DS(ON) GS power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low • Includes SyncFET Schottky body diode R and low gate charge. The FDP/B6676S DS(ON) includes an integrated Schottky diode using Fairchild’s • Low gate charge (40nC typical) monolithic SyncFET technology. The performance of the FDP/B6676S as the low-side switch in a synchronous rectifier is indistinguishable from the • High performance trench technology for extremely performance of the FDP/B6676 in parallel with a low R and fast switching DS(ON) Schottky diode. • High power and current handling capability • D D G G G S TO-263AB TO-220 D FDP Series FDB Series S S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS VGSS Gate-Source Voltage ±16 V I Drain Current – Continuous (Note 1) A D 76 – Pulsed (Note 1) 150 P W D Total Power Dissipation @ T = 25°C C 70 Derate above 25°C W/°C 0.56 T , T J STG Operating and Storage Junction Temperature Range –55 to +150 °C T Maximum lead temperature for soldering purposes, °C L 275 1/8” from case for 5 seconds Thermal Characteristics R Thermal Resistance, Junction-to-Case 1.8 θJC °C/W R θJA Thermal Resistance, Junction-to-Ambient 55 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDB6676S FDB6676S 13’’ 24mm 800 FDP6676S FDP6676S Tube n/a 45 FDP6676S/FDB6676S Rev. C (W) 2001
ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED