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FDB6030L
N-Channel Logic Level Enhancement Mode Field Effect Transistor
April 1998 FDP6030L / FDB6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power 52 A, 30 V. R = 0.0135 W @ V =10 V DS(ON) GS field effect transistors are produced using Fairchild's R = 0.020 W @ V =4.5 V. DS(ON) GS proprietary, high cell density, DMOS technology. This very Improved replacement for NDP6030L/NDB6030L. high density process is especially tailored to minimize on-state resistance. These devices are particularly suited Low gate charge (typical 34 nC). for low voltage applications such as DC/DC converters and Low Crss (typical 175 pF). high efficiency switching circuits where fast switching, low in-line power loss, and resistance to transients are needed. Fast switching speed. _________________________________________________________________________________ D G S Absolute Maximum Ratings T = 25°C unless otherwise note C Symbol Parameter FDP6030L FDB6030L Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage - Continuous ±20 V GSS I Drain Current - Continuous 52 A D - Pulsed 156 P Maximum Power Dissipation @ T = 25°C 75 W D C Derate above 25°C 0.5 W/°C T ,T Operating and Storage Temperature Range -65 to 175 °C J STG THERMAL CHARACTERISTICS R Thermal Resistance, Junction-to-Case 2 °C/W JC q R Thermal Resistance, Junction-to-Ambient 62.5 °C/W qJA © 1998 FDP6030L Rev.C1
