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FDB6030BLFSCN/a43avaiN-Channel Logic Level PowerTrench MOSFET


FDB6030BL ,N-Channel Logic Level PowerTrench MOSFETFeatures• 40 A, 30 V. R = 0.018 Ω @ V = 10 VThis N-Channel Logic Level MOSFET has been designedDS(O ..
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FDB6030BL
N-Channel Logic Level PowerTrench MOSFET
FDP6030BL/FDB6030BL July 2000 FDP6030BL/FDB6030BL      N-Channel Logic Level PowerTrench MOSFET General Description Features • 40 A, 30 V. R = 0.018 Ω @ V = 10 V This N-Channel Logic Level MOSFET has been designed DS(ON) GS R = 0.024 Ω @ V = 4.5 V. specifically to improve the overall efficiency of DC/DC DS(ON) GS converters using either synchronous or conventional • Critical DC electrical parameters specified at elevated switching PWM controllers. temperature. These MOSFETs feature faster switching and lower gate • Rugged internal source-drain diode can eliminate the charge than other MOSFETs with comparable R DS(on) need for an external Zener diode transient suppressor. specifications resulting in DC/DC power supply designs with higher overall efficiency. • High performance trench technology for extremely low R . DS(ON) • 175°C maximum junction temperature rating. D D G G G TO-220 D FDP Series S S TO-263AB S FDB Series T = 25°C unless otherwise noted Absolute Maximum Ratings C FDP6030BL FDB6030BL Symbol Parameter Units V Drain-Source Voltage 30 V DSS ± V Gate-Source Voltage V GSS 20 I Maximum Drain Current - Continuous (Note 1) 40 A D - Pulsed 120 P ° 60 W D Total Power Dissipation @ T = 25 C C ° ° 0.36 Derate above 25 C W/ C ° T , T Operating and Storage Junction Temperature Range -65 to +175 C J STG Thermal Characteristics ° Rθ Thermal Resistance, Junction-to-Case 2.5 C/W JC ° θ Thermal Resistance, Junction-to-Ambient 62.5 R C/W JA Package Marking and Ordering Information Device Marking Device Reel Size Tape Width Quantity FDB6030BL FDB6030BL 13’’ 24mm 800 FDP6030BL FDP6030BL Tube N/A 45 2000 Fairchild Semiconductor International FDP6030BL/FDB6030BL Rev.C
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