FDB42AN15A0 ,N-Channel PowerTrench ?MOSFET 150V, 35A, 42mOhmApplications•r = 36mΩ (Typ.), V = 10V, I = 12A DC/DC Converters and Off-line UPSDS(ON) GS DQ (to ..
FDB44N25 ,N-Channel UniFETTM MOSFET 250V, 44A, 69m?Applicationslamp ballasts.•PDP TV• Lighting• Uninterruptible Power Supply• AC-DC Power SupplyDD ..
FDB52N20 ,N-Channel UniFETTM MOSFET 200V, 52A, 49m?Applicationslamp ballasts.•PDP TV• Lighting• Uninterruptible Power Supply• AC-DC Power SupplyDD ..
FDB5645 ,60V N-Channel PowerTrench ?MOSFETFeaturesThis N-Channel MOSFET has been designed• 80 A, 60 V. R = 0.0095 Ω @ V = 10 VDS(ON) GSspecif ..
FDB5680 ,60 N-Channel PowerTrench TM MOSFET July 2000 ..
FDB5690 ,60V N-Channel PowerTrench TM MOSFETFeatures• 32 A, 60 V. R = 0.027 Ω @ V = 10 VDS(ON) GSThis N-Channel MOSFET has been designed specif ..
FMMT625TA , 150V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23
FMMT717 , 625mW power dissipation, IC up to 10A peak pulse current
FMMT718 , 625mW power dissipation, Extremely low saturation voltage e.g. 10mV typ
FMMT723TA , SOT23 PNP SILICON POWER (SWITCHING) TRANSISTORS
FMMT723TA , SOT23 PNP SILICON POWER (SWITCHING) TRANSISTORS
FMMT734 , “SUPER SOT” SOT23 PNP SILICON POWER DARLINGTON TRANSISTOR
FDB42AN15A0
N-Channel PowerTrench ?MOSFET 150V, 35A, 42mOhm
FDP42AN15A0 / FDB42AN15A0 / FDI42AN15A0 August 2002 FDP42AN15A0 / FDB42AN15A0 / FDI42AN15A0 ® N-Channel PowerTrench MOSFET 150V, 35A, 42mΩ Features Applications •r = 36mΩ (Typ.), V = 10V, I = 12A DC/DC Converters and Off-line UPS DS(ON) GS D Q (tot) = 33nC (Typ.), V = 10VDistributed Power Architectures and VRMs g GS Low Miller ChargePrimary Switch for 24V and 48V Systems Low Qrr Body DiodeHigh Voltage Synchronous Rectifier UIS Capability (Single Pulse and Repetitive Pulse)Direct Injection / Diesel Injection Systems Qualified to AEC Q10142V Automotive Load Control Electronic Valve Train Systems Formerly developmental type 82864 SOURCE DRAIN DRAIN (FLANGE) D GATE GATE SOURCE DRAIN G SOURCE GATE DRAIN TO-263AB TO-220AB TO-262AA S (FLANGE) DRAIN FDB SERIES FDP SERIES FDI SERIES (FLANGE) MOSFET Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 150 V DSS V Gate to Source Voltage ±20 V GS Drain Current o 35 A Continuous (T = 25 C, V = 10V) C GS o I Continuous (T = 100 C, V = 10V) 24 D C GS o o Continuous (T = 25 C, V = 10V, with R = 43 C/W) 5 A amb GS θJA Pulsed Figure 4 A E Single Pulse Avalanche Energy (Note 1) 90 mJ AS Power dissipation 150 W P D o o Derate above 25C1.00W/ C o T , T Operating and Storage Temperature -55 to 175 C J STG Thermal Characteristics o R Thermal Resistance Junction to Case TO-220,TO-263,TO-262 1.0 C/W θJC o R Thermal Resistance Junction to Ambient TO-220,TO-263,TO-262 62 C/W θJA 2 o R Thermal Resistance Junction to Ambient TO-263, 1in copper pad area 43 C/W θJA This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http:///products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. ©2002 FDP42AN15A0 / FDB42AN15A0 / FDI42AN15A0 Rev. B
