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FDB3652N/a2400avaiN-Channel PowerTrench ?MOSFET 100V, 61A, 16m Ohm
FDB3652N/AN/a2400avaiN-Channel PowerTrench ?MOSFET 100V, 61A, 16m Ohm
FDB3652FAIRCHILN/a4800avaiN-Channel PowerTrench ?MOSFET 100V, 61A, 16m Ohm


FDB3652 ,N-Channel PowerTrench ?MOSFET 100V, 61A, 16m OhmFDB3652 / FDP3652 / FDI3652July 2002FDB3652 / FDP3652 / FDI3652®N-Channel PowerTrench MOSFET100V, 6 ..
FDB3652 ,N-Channel PowerTrench ?MOSFET 100V, 61A, 16m OhmApplications•r = 14mΩ (Typ.), V = 10V, I = 61A  DC/DC Converters and Off-line UPSDS(ON) GS DQ (to ..
FDB3652 ,N-Channel PowerTrench ?MOSFET 100V, 61A, 16m OhmApplications•r = 14mΩ (Typ.), V = 10V, I = 61A  DC/DC Converters and Off-line UPSDS(ON) GS DQ (to ..
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FDB3652
N-Channel PowerTrench ?MOSFET 100V, 61A, 16m Ohm
FDB3652 / FDP3652 / FDI3652 July 2002 FDB3652 / FDP3652 / FDI3652 ® N-Channel PowerTrench MOSFET 100V, 61A, 16mΩ Features Applications •r = 14mΩ (Typ.), V = 10V, I = 61A DC/DC Converters and Off-line UPS DS(ON) GS D Q (tot) = 41nC (Typ.), V = 10VDistributed Power Architectures and VRMs g GS Low Miller ChargePrimary Switch for 24V and 48V Systems Low Qrr Body DiodeHigh Voltage Synchronous Rectifier UIS Capability (Single Pulse and Repetitive Pulse)Direct Injection / Diesel Injection Systems Qualified to AEC Q10142V Automotive Load Control Electronic Valve Train Systems Formerly developmental type 82769 SOURCE DRAIN DRAIN (FLANGE) D GATE GATE SOURCE DRAIN G SOURCE GATE DRAIN TO-263AB TO-220AB TO-262AA S (FLANGE) DRAIN FDB SERIES FDP SERIES FDI SERIES (FLANGE) MOSFET Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 100 V DSS V Gate to Source Voltage ±20 V GS Drain Current o 61 A Continuous (T = 25 C, V = 10V) C GS o I Continuous (T = 100 C, V = 10V) 43 A D C GS o o Continuous (T = 25 C, V = 10V) with R = 43 C/W) 9 A amb GS θJA Pulsed Figure 4 A E Single Pulse Avalanche Energy (Note 1) 182 mJ AS Power dissipation 150 W P D o o Derate above 25C1.0W/ C o T , T Operating and Storage Temperature -55 to 175 C J STG Thermal Characteristics o R Thermal Resistance Junction to Case TO-220, TO-263, TO-262 1.0 C/W θJC o R Thermal Resistance Junction to Ambient TO-220, TO-263, TO-262 (Note 2) 62 C/W θJA 2 o R Thermal Resistance Junction to Ambient TO-263, 1in copper pad area 43 C/W θJA This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http:///products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. ©2002 FDB3652 / FDP3652 / FDI3652 Rev. A1
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