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FDB2614FSCN/a90avaiN-Channel PowerTrench?MOSFET 200V, 62A, 27m?
FDB2614FAIRCHILDN/a2126avaiN-Channel PowerTrench?MOSFET 200V, 62A, 27m?


FDB2614 ,N-Channel PowerTrench?MOSFET 200V, 62A, 27m?Applications • High Power and Current Handling Capability• Synchronous Rectificat ..
FDB2614 ,N-Channel PowerTrench?MOSFET 200V, 62A, 27m?Features Description•R = 22.9 mΩ ( Typ.) @ V = 10 V, I = 31 ADS(on) GS D This N-Channel MOSFET is p ..
FDB2670 ,200V N-Channel PowerTrench MOSFETFeaturesThis N-Channel MOSFET has been designed• 19 A, 200 V. R = 130 mΩ @ V = 10 VDS(ON) GSspecifi ..
FDB2710 ,N-Channel PowerTrench?MOSFET 250V, 50A, 42.5m?Applications • High Power and Current Handling Capability• Synchronous Rectificat ..
FDB28N30TM ,N-Channel UniFETTM MOSFET 300V, 28A, 129m?Applications• Uninterruptible Power Supply• AC-DC Power SupplyDDGG2D -PAKS SoMOSFET Maximum Ratings ..
FDB33N25 ,N-Channel UniFETTM MOSFET 250V, 33A, 94m?Applicationslamp ballasts.•PDP TV• Lighting• Uninterruptible Power Supply• AC-DC Power SupplyDD●● ..
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FDB2614
N-Channel PowerTrench?MOSFET 200V, 62A, 27m?
® FDB2614 N-Channel PowerTrench MOSFET March 2013 tm FDB2614 ® N-Channel PowerTrench MOSFET 200 V, 62 A, 27 mΩ Features Description •R = 22.9 mΩ ( Typ.) @ V = 10 V, I = 31 A DS(on) GS D This N-Channel MOSFET is produced using Fairchild ® ® Semiconductor ’s PowerTrench process that has been tai- • High Performance Trench Technology for Extremely Low lored to minimize the on-state resistance while maintaining R DS(on) superior switching performance. • Low Gate Charge Applications • High Power and Current Handling Capability • Synchronous Rectification • Battery Protection Circuit • Motor drives and Uninterruptible Power Supplies D D G G D2-PAK S (TO-263) S Absolute Maximum Ratings Symbol Parameter FDB2614 Unit V Drain-Source Voltage 200 V DS V Gate-Source Voltage ± 30 V GS I Drain Current - Continuous (T = 25°C) 62 A D C - Continuous (T = 100°C) 39.3 A C (Note 1) I Drain Current - Pulsed A DM see Figure 9 (Note 2) E Single Pulsed Avalanche Energy 145 mJ AS (Note 3) dv/dt Peak Diode Recovery dv/dt 4.5 V/ns P Power Dissipation (T = 25°C) 260 W D C - Derate above 25°C 2.1 W/°C T T Operating and Storage Temperature Range -55 to +150 °C J, STG T Maximum Lead Temperature for Soldering Purpose, L 300 °C 1/8” from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FDB2614 Unit R Thermal Resistance, Junction-to-Case, Max. 0.48 °C/W θJC R Thermal Resistance, Junction-to-Ambient, Max. 40 °C/W θJA R * Thermal Resistance, Junction-to-Ambient, Max. * 62.5 °C/W θJA *When mounted on the minimum pad size recommended (PCB Mount) ©2006 1 FDB2614 Rev. C0
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