FDB2532 ,N-Channel PowerTrench ?MOSFET 150V, 79A, 16mOhmFDB2532 / FDP2532 / FDI2532August 2002FDB2532 / FDP2532 / FDI2532®N-Channel PowerTrench MOSFET150V, ..
FDB2552 ,N-Channel PowerTrench ?MOSFET 150V, 37A, 36mOhmApplications•r = 32mΩ (Typ.), V = 10V, I = 16A DC/DC Converters and Off-line UPSDS(ON) GS DQ (to ..
FDB2552 ,N-Channel PowerTrench ?MOSFET 150V, 37A, 36mOhmFDB2552 / FDP2552June 2002FDB2552 / FDP2552®N-Channel PowerTrench MOSFET150V, 37A, 36mΩ
FDB2570 ,150V N-Channel PowerTrench MOSFETFeaturesThis N-Channel MOSFET has been designed• 22 A, 150 V. R = 80 mΩ @ V = 10 VDS(ON) GSspecific ..
FDB2572 ,N-Channel UltraFET ?Trench MOSFET 150V, 29A, 54mOhmApplicationsr = 45mΩ (Typ.), V = 10V, I = 9A DC/DC converters and Off-Line UPSDS(ON) GS DQ (tot ..
FDB2572 ,N-Channel UltraFET ?Trench MOSFET 150V, 29A, 54mOhmFDB2572 / FDP2572July 2002FDB2572 / FDP2572®N-Channel UltraFET Trench MOSFET150V, 29A, 54mΩ
FMMT617TC , 15V NPN LOW SATURATION TRANSISTOR IN SOT23
FMMT618 , NPN SILICON POWER (SWITCHING) TRANSISTORS
FMMT619 , Collector current:IC=2A, power dissipation :PC=625mw
FMMT619 , Collector current:IC=2A, power dissipation :PC=625mw
FMMT619TA , 50V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23
FMMT619-TA , 50V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23
FDB2532
N-Channel PowerTrench ?MOSFET 150V, 79A, 16mOhm
FDB2532 / FDP2532 / FDI2532 August 2002 FDB2532 / FDP2532 / FDI2532 ® N-Channel PowerTrench MOSFET 150V, 79A, 16mΩ Features Applications r = 14mΩ (Typ.), V = 10V, I = 33ADC/DC converters and Off-Line UPS DS(ON) GS D Q (tot) = 82nC (Typ.), V = 10V g GS Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low Q Body Diode RR High Voltage Synchronous Rectifier UIS Capability (Single Pulse and Repetitive Pulse) Direct Injection / Diesel Injection Systems Qualified to AEC Q101 42V Automotive Load Control Formerly developmental type 82884 Electronic Valve Train Systems D DRAIN SOURCE DRAIN DRAIN (FLANGE) SOURCE (FLANGE) GATE DRAIN GATE GATE SOURCE G TO-220AB DRAIN TO-262AB TO-263AB FDP SERIES (FLANGE) FDB SERIES FDI SERIES S MOSFET Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 150 V DSS V Gate to Source Voltage ±20 V GS Drain Current o 79 A Continuous (T = 25 C, V = 10V) C GS o I Continuous (T = 100 C, V = 10V) 56 A D C GS o o Continuous (T = 25 C, V = 10V, R = 43 C/W) 8 A amb GS θJA Pulsed Figure 4 A E Single Pulse Avalanche Energy (Note 1) 400 mJ AS Power dissipation 310 W P D o o Derate above 25C2.07W/ C o T , T Operating and Storage Temperature -55 to 175 C J STG Thermal Characteristics o R Thermal Resistance Junction to Case TO-220, TO-263, TO-262 0.48 C/W θJC o R Thermal Resistance Junction to Ambient TO-220, TO-262 (Note 2) 62 C/W θJA 2 o R Thermal Resistance Junction to Ambient TO-263, 1in copper pad area 43 C/W θJA This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http:///products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. ©2002 FDB2532 / FDP2532 / FDI2532 Rev. B
