FDB031N08 ,N-Channel PowerTrench?MOSFET 75V, 235A, 3.1m?Applications• High Power and Current Handling Capability• Synchronous Rectification for ATX / Serve ..
FDB031N08 ,N-Channel PowerTrench?MOSFET 75V, 235A, 3.1m?Features Description•R = 2.4 mΩ ( Typ.)@ V = 10 V, I = 75 A This N-Channel MOSFET is produced using ..
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FDB031N08
N-Channel PowerTrench?MOSFET 75V, 235A, 3.1m?
® FDB031N08 N-Channel PowerTrench MOSFET April 2013 FDB031N08 tm ® N-Channel PowerTrench MOSFET 75 V, 235 A, 3.1 mΩ Features Description •R = 2.4 mΩ ( Typ.)@ V = 10 V, I = 75 A This N-Channel MOSFET is produced using Fairchild Semicon- DS(on) GS D ® ® ductor ’s adcanced PowerTrench process that has been tai- • Fast Switching Speed lored to minimize the on-state resistance while maintaining • Low Gate Charge superior switching performance. • High Performance Trench Technology for Extremely Low R DS(on) Applications • High Power and Current Handling Capability • Synchronous Rectification for ATX / Server / Telecom PSU • RoHS Compliant • Battery Protection Circuit • Motor Drives and Uninterruptible Power Supplies D D G 2 D -PAK GS S o MOSFET Maximum Ratings T = 25 C unless otherwise noted* C Symbol Parameter FDB031N08 Unit V Drain to Source Voltage 75 V DSS V Gate to Source Voltage ±20 V GSS o 235* A Drain Current - Continuous (T = 25 C, Silicon Limited) C o I - Continuous (T = 100 C, Silicon Limited) 165* A D C o - Continuous (T = 25 C, Package Limited) C 120 A I Drain Current - Pulsed (Note 1) 940 A DM E Single Pulsed Avalanche Energy (Note 2) 1995 mJ AS dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns o (T = 25 C) 375 W C P Power Dissipation D o o - Derate above 25C2.5W/ C o T , T Operating and Storage Temperature Range -55 to +175 C J STG Maximum Lead Temperature for Soldering Purpose, o T 300 C L 1/8” from Case for 5 Seconds *Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A. Thermal Characteristics Symbol Parameter FDB031N08 Unit R Thermal Resistance, Junction to Case, Max. 0.4 θJC o C/W R Thermal Resistance, Junction to Ambient, Max. 62.5 θJA ©2008 1 FDB031N08 Rev. C1
