FDA8440 ,N-Channel Logic Level PowerTrench?MOSFET 40V, 10A, 2.1m?ApplicationsRDS(on) • Synchronous Rectification for ATX / Server / Telecom PSU• High Power and Curr ..
FDB031N08 ,N-Channel PowerTrench?MOSFET 75V, 235A, 3.1m?Applications• High Power and Current Handling Capability• Synchronous Rectification for ATX / Serve ..
FDB031N08 ,N-Channel PowerTrench?MOSFET 75V, 235A, 3.1m?Features Description•R = 2.4 mΩ ( Typ.)@ V = 10 V, I = 75 A This N-Channel MOSFET is produced using ..
FDB035AN06A0 ,N-Channel PowerTrench ?MOSFET 60V, 80A, 3.5mOhm
FDB035AN06A0 ,N-Channel PowerTrench ?MOSFET 60V, 80A, 3.5mOhm
FDB039N06 ,N-Channel PowerTrench?MOSFET 60V, 174A, 3.9m?ApplicationsRDS(on)• Synchronous Rectification for ATX / Server / Telecom PSU• High Power and Curre ..
FMMT549 ,Discrete
FMMT549 ,Discrete
FMMT558TA , 400V PNP HIGH VOLTAGE TRANSISTOR IN SOT23
FMMT589 , PNP SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR
FMMT617TC , 15V NPN LOW SATURATION TRANSISTOR IN SOT23
FMMT618 , NPN SILICON POWER (SWITCHING) TRANSISTORS
FDA8440
N-Channel Logic Level PowerTrench?MOSFET 40V, 10A, 2.1m?
® FDB024N06 N-Channel PowerTrench MOSFET March 2013 FDB024N06 ® N-Channel PowerTrench MOSFET 60 V, 265 A, 2.4 mΩ Features Description •R = 1.8 mΩ ( Typ.)@ V = 10 V, I = 75 A This N-Channel MOSFET is produced using Fairchild Semicon- DS(on) GS D ® ® ductor ’s advanced PowerTrench process that has been tai- • Fast Switching Speed lored to minimize the on-state resistance while maintaining superior switching performance. • Low Gate Charge • High Performance Trench Technology for Extremely Low Applications R DS(on) • Synchronous Rectification for ATX / Server / Telecom PSU • High Power and Current Handling Capability • Battery Protection Circuit • RoHS Compliant • Motor Drives and Uninterruptible Power Supplies • Renewable system D D G 2 D -PAK G S S o MOSFET Maximum Ratings T = 25 C unless otherwise noted C Symbol Parameter FDB024N06 Unit V Drain to Source Voltage 60 V DSS V Gate to Source Voltage ±20 V GSS o -Continuous (T = 25 C, Silicon Limited) 265* C o I Drain Current -Continuous (T = 100 C, Silicon Limited) 190* A D C o -Continuous (T = 25 C, Package Limited) 120 C I Drain Current - Pulsed (Note 1) 1060 A DM E Single Pulsed Avalanche Energy (Note 2) 2531 mJ AS dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns o (T = 25 C) 395 W C P Power Dissipation D o o - Derate above 25C2.6W/ C o T , T Operating and Storage Temperature Range -55 to +175 C J STG Maximum Lead Temperature for Soldering Purpose, o T 300 C L 1/8” from Case for 5 Seconds *Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A. Thermal Characteristics Symbol Parameter FDB024N06 Unit R Thermal Resistance, Junction to Case, Max. 0.38 θJC o Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max. 62.5 C/W R θJA 2 Thermal Resistance, Junction to Ambient (1 in pad of 2 oz copper), Max. 40 ©2008 1 FDB024N06 Rev. C1
