FDA69N25 ,N-Channel UniFETTM MOSFET 250V, 69A, 41m?applications such as PFC, FPD TV power, ATX and lighting ballasts.•PDP TV• Uninterruptible Power Su ..
FDA70N20 ,N-Channel UniFETTM MOSFET 200V, 70A, 35m?FeaturesDescriptionTM ®UniFET MOSFET is Fairchild Semiconductor ’s high voltage • R = 35 mΩ (Max.) ..
FDA79N15 , 150V N-Channel MOSFET
FDA8440 ,N-Channel Logic Level PowerTrench?MOSFET 40V, 10A, 2.1m?ApplicationsRDS(on) • Synchronous Rectification for ATX / Server / Telecom PSU• High Power and Curr ..
FDB031N08 ,N-Channel PowerTrench?MOSFET 75V, 235A, 3.1m?Applications• High Power and Current Handling Capability• Synchronous Rectification for ATX / Serve ..
FDB031N08 ,N-Channel PowerTrench?MOSFET 75V, 235A, 3.1m?Features Description•R = 2.4 mΩ ( Typ.)@ V = 10 V, I = 75 A This N-Channel MOSFET is produced using ..
FMMT5400 , SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTORS
FMMT549 ,Discrete
FMMT549 ,Discrete
FMMT558TA , 400V PNP HIGH VOLTAGE TRANSISTOR IN SOT23
FMMT589 , PNP SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR
FMMT617TC , 15V NPN LOW SATURATION TRANSISTOR IN SOT23
FDA69N25
N-Channel UniFETTM MOSFET 250V, 69A, 41m?
TM FDA69N25 N-Channel UniFET MOSFET March 2013 FDA69N25 TM N-Channel UniFET MOSFET 250 V, 69 A, 41 m Features Description TM ® UniFET MOSFET is Fairchild Semiconductor ’s high voltage •R = 41 m (Max.) @ V = 10 V, I = 34.5 A DS(on) GS D MOSFET family based on planar stripe and DMOS technology. • Low Gate Charge (Typ. 77 nC) This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche • Low Crss (Typ. 84 pF) energy strength. This device family is suitable for switching Applications power converter applications such as PFC, FPD TV power, ATX and lighting ballasts. •PDP TV • Uninterruptible Power Supply • AC-DC Power Supply D G G D TO-3PN S S Absolute Maximum Ratings Symbol Parameter FDA69N25 Unit V Drain-Source Voltage 250 V DSS (Note 1) V Repetitive Avalanche Voltage DS(Avalanche) 300 V (Note 2) I Drain Current - Continuous (T = 25°C) 69 A D C - Continuous (T = 100°C) 44.2 A C (Note 1) I Drain Current - Pulsed 276 A DM V Gate-Source Voltage 30 V GSS (Note 2) E Single Pulsed Avalanche Energy 1894 mJ AS (Note 1) I Avalanche Current 69 A AR (Note 1) E Repetitive Avalanche Energy 48 mJ AR (Note 3) dv/dt Peak Diode Recovery dv/dt 4.5 V/ns P Power Dissipation 480 W D (T = 25°C) C - Derate above 25°C 3.84 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter FDA69N25 Unit R Thermal Resistance, Junction-to-Case, Max. 0.26 JC °C/W R Thermal Resistance, Junction-to-Ambient, Max. 40 JA ©2006 1 FDA69N50 Rev. C0
