FDA59N30 ,N-Channel UniFETTM MOSFET 300V, 59A, 56m?Features DescriptionTM ®UniFET MOSFET is Fairchild Semiconductor ’s high voltage •R = 56 m (Max.) ..
FDA69N25 ,N-Channel UniFETTM MOSFET 250V, 69A, 41m?applications such as PFC, FPD TV power, ATX and lighting ballasts.•PDP TV• Uninterruptible Power Su ..
FDA70N20 ,N-Channel UniFETTM MOSFET 200V, 70A, 35m?FeaturesDescriptionTM ®UniFET MOSFET is Fairchild Semiconductor ’s high voltage • R = 35 mΩ (Max.) ..
FDA79N15 , 150V N-Channel MOSFET
FDA8440 ,N-Channel Logic Level PowerTrench?MOSFET 40V, 10A, 2.1m?ApplicationsRDS(on) • Synchronous Rectification for ATX / Server / Telecom PSU• High Power and Curr ..
FDB031N08 ,N-Channel PowerTrench?MOSFET 75V, 235A, 3.1m?Applications• High Power and Current Handling Capability• Synchronous Rectification for ATX / Serve ..
FMMT5400 , SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTORS
FMMT549 ,Discrete
FMMT549 ,Discrete
FMMT558TA , 400V PNP HIGH VOLTAGE TRANSISTOR IN SOT23
FMMT589 , PNP SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR
FMMT617TC , 15V NPN LOW SATURATION TRANSISTOR IN SOT23
FDA59N30
N-Channel UniFETTM MOSFET 300V, 59A, 56m?
TM FDA59N30 N-Channel UniFET MOSFET March 2013 FDA59N30 TM N-Channel UniFET MOSFET 300 V, 59 A, 56 m Features Description TM ® UniFET MOSFET is Fairchild Semiconductor ’s high voltage •R = 56 m (Max.) @ V = 10 V, I = 29.5 A DS(on) GS D MOSFET family based on planar stripe and DMOS technology. • Low Gate Charge (Typ. 77 nC) This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche •Low C (Typ. 80 pF) rss energy strength. This device family is suitable for switching • 100% Avalanche Tested power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic Applications lamp ballasts. •PDP TV • Uninterruptible Power Supply • AC-DC Power Supply D G G D TO-3PN S S Absolute Maximum Ratings Symbol Parameter FDA59N30 Unit V Drain-Source Voltage 300 V DSS I Drain Current - Continuous (T = 25C) 59 A D C - Continuous (T = 100C) 35 A C (Note 1) I Drain Current - Pulsed 236 A DM V Gate-Source voltage 30 V GSS (Note 2) E Single Pulsed Avalanche Energy 1734 mJ AS I Avalanche Current (Note 1) 59 A AR E Repetitive Avalanche Energy (Note 1) 50 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation (T = 25C) 500 W D C - Derate above 25C 4 W/C T T Operating and Storage Temperature Range -55 to +150 C J, STG T Maximum Lead Temperature for Soldering Purpose, L 300 C 1/8” from Case for 5 Seconds Thermal Characteristics Symbol Parameter FDA59N30 Unit R Thermal Resistance, Junction-to-Case, Max. 0.25 JC C/W R Thermal Resistance, Junction-to-Ambient, Max. 40 JA ©2005 1 FDA59N30 Rev. C0
