FDA20N50 ,N-Channel UniFETTM MOSFET 500V, 20A, 230mOhmsApplications•PDP TV• Uninterruptible Power Supply• AC-DC Power SupplyDGGTO-3P DS SAbsolut ..
FDA20N50 ,N-Channel UniFETTM MOSFET 500V, 20A, 230mOhmsFeatures DescriptionTM ®•R = 230 m (Max.) @ V = 10 V, I = 10 A UniFET MOSFET is Fairchild Semicon ..
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FDA20N50
N-Channel UniFETTM MOSFET 500V, 20A, 230mOhms
TM FDA20N50_F109 N-Channel UniFET MOSFET March 2013 FDA20N50_F109 TM N-Channel UniFET MOSFET 500 V, 20 A, 230 m Features Description TM ® •R = 230 m (Max.) @ V = 10 V, I = 10 A UniFET MOSFET is Fairchild Semiconductor ’s high voltage DS(on) GS D MOSFET family based on planar stripe and DMOS technology. • Low Gate Charge (Typ. 45.6 nC) This MOSFET is tailored to reduce on-state resistance, and to •Low C (Typ. 27 pF) rss provide better switching performance and higher avalanche energy strength. This device family is suitable for switching • 100% Avalanche Tested power converter applications such as power factor correction • Improved dv/dt Capability (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. Applications •PDP TV • Uninterruptible Power Supply • AC-DC Power Supply D G G TO-3P D S S Absolute Maximum Ratings Symbol Parameter FDA20N50_F109 Unit V Drain-Source Voltage 500 V DSS I Drain Current - Continuous (T = 25C) 22 A D C - Continuous (T = 100C) 13.2 A C (Note 1) I Drain Current - Pulsed A DM 88 V Gate-Source voltage 30 V GSS (Note 2) E Single Pulsed Avalanche Energy 1110 mJ AS I Avalanche Current (Note 1) 22 A AR E Repetitive Avalanche Energy (Note 1) 28.0 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns P Power Dissipation (T = 25C) 280 W D C - Derate above 25C 2.3 W/C T T Operating and Storage Temperature Range -55 to +150 C J, STG T Maximum Lead Temperature for Soldering Purpose, L 300 C 1/8” from Case for 5 Seconds Thermal Characteristics Symbol Parameter FDA20N50_F109 Unit R Thermal Resistance, Junction-to-Case, Max. 0.44 C/W JC R Thermal Resistance, Junction-to-Ambient, Max. 40 C/W JA ©2012 1 FDA20N50_F109 Rev.C0
