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FCP20N60FAIRCHILN/a30avai600V N-Channel SuperFET
FCPF20N60N/a1avai600V N-Channel SuperFET


FCP20N60 ,600V N-Channel SuperFETFeatures DescriptionTM• 650V @T = 150°C SuperFET is, Farichild’s proprietary, new generation of hig ..
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FCP20N60-FCPF20N60
600V N-Channel SuperFET
FCP20N60 / FCPF20N60 600V N-Channel MOSFET TM SuperFET FCP20N60 / FCPF20N60 600V N-Channel MOSFET Features Description TM • 650V @T = 150°C SuperFET is, Farichild’s proprietary, new generation of high J voltage MOSFET family that is utilizing an advanced charge •Typ. R = 0.15Ω DS(on) balance mechanism for outstanding low on-resistance and • Ultra low gate charge (typ. Q = 75nC) lower gate charge performance. g • Low effective output capacitance (typ. C .eff = 165pF) This advanced technology has been tailored to minimize con- oss duction loss, provide superior switching performance, and with- • 100% avalanche tested stand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system min- iaturization and higher efficiency. D ! ! "" !! "" "" G! ! "" TO-220F TO-220 G D S ! ! G D S S Absolute Maximum Ratings Symbol Parameter FCP20N60 FCPF20N60 Unit V Drain-Source Voltage 600 V DSS I Drain Current - Continuous (T = 25°C) 20 20* A D C - Continuous (T = 100°C) 12.5 12.5* A C (Note 1) I Drain Current - Pulsed A DM 60 60* V Gate-Source voltage ± 30 V GSS (Note 2) E Single Pulsed Avalanche Energy 690 mJ AS (Note 1) I Avalanche Current 20 A AR (Note 1) E Repetitive Avalanche Energy 20.8 mJ AR (Note 3) dv/dt Peak Diode Recovery dv/dt 4.5 V/ns P Power Dissipation (T = 25°C) 208 39 W D C - Derate above 25°C 1.67 0.3 W/°C T T Operating and Storage Temperature Range -55 to +150 °C J, STG T Maximum Lead Temperature for Soldering Purpose, L 300 °C 1/8” from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FCP20N60 FCPF20N60 Unit R Thermal Resistance, Junction-to-Case 0.6 3.2 °C/W θJC R Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W θJA ©2005 1 FCP20N60 / FCPF20N60 Rev. A
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