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FCP11N60FAIRCHILN/a50avai600V N-Channel SuperFET
FCPF11N60FAIRCHILDN/a245avai600V N-Channel SuperFET
FCPF11N60.. |FCPF11N60FSCN/a30avai600V N-Channel SuperFET


FCPF11N60 ,600V N-Channel SuperFETFeaturesTMSuperFET is a new generation of high voltage MOSFETs • 650V @T = 150°Cjfrom Fairchild wit ..
FCPF11N60.. ,600V N-Channel SuperFETFCP11N60/FCPF11N60TMSuperFETFCP11N60/FCPF11N60
FCPF11N60F ,600V N-Channel MOSFETFeatures DescriptionTM• 650V @T = 150°C SuperFET is, Farichild’s proprietary, new generation of hig ..
FCPF11N60NT ,N-Channel SupreMOS?MOSFET 600V, 10.8A, 299m?Features Description® ®•R = 255 mΩ (Typ.) @ V = 10 V, I = 5.4 A The SupreMOS MOSFET is Fairchild Se ..
FCPF11N60NT ,N-Channel SupreMOS?MOSFET 600V, 10.8A, 299m?applications.Application• LCD/LED/PDP TV• Lighting• Solar Inverter• AC-DC Power SupplyDGTO-220TO-22 ..
FCPF11N60T , General Description
FMA7A , Emitter common (dual digital transistors)
FMA7A , Emitter common (dual digital transistors)
FMA8A , Emitter common (dual digital transistors)
FMA8A , Emitter common (dual digital transistors)
FMB-2204 , Schottky Barrier Diodes
FMB-2204 , Schottky Barrier Diodes


FCP11N60-FCPF11N60-FCPF11N60..
600V N-Channel SuperFET
FCP11N60/FCPF11N60 TM SuperFET FCP11N60/FCPF11N60 General Description Features TM SuperFET is a new generation of high voltage MOSFETs • 650V @T = 150°C j from Fairchild with outstanding low on-resistance and low • Typ. Rds(on)=0.32Ω gate charge performance, a result of proprietary technology • Ultra low gate charge (typ. Qg=40nC) utilizing advanced charge balance mechanisms. • Low effective output capacitance (typ. Coss.eff=95pF) This advanced technology has been tailored to minimize • 100% avalanche tested conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. D !!!!!!!! ● ● ● ● ● ● ● ● ◀ ◀ ◀ ◀ ◀ ◀ ◀ ◀ ▲▲▲▲▲▲▲▲ ● ● ● ● ● ● ● ● G!!!!!!!! ● ● ● ● ● ● ● ● TO-220 TO-220F G D S G D S FCP Series FCPF Series !!!!!!!! S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FCP11N60 FCPF11N60 Units I - Continuous (T = 25°C) Drain Current 11 11* A D C - Continuous (T = 100°C) 77* A C I Drain Current - Pulsed (Note 1) 33 33* A DM V Gate-Source Voltage ± 30 V GSS E Single Pulsed Avalanche Energy (Note 2) 340 mJ AS I Avalanche Current (Note 1) 11 A AR E Repetitive Avalanche Energy (Note 1) 12.5 mJ AR (Note 3) dv/dt Peak Diode Recovery dv/dt 4.5 V/ns P Power Dissipation (T = 25°C) 125 36 W D C - Derate above 25°C 1.0 0.29 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds * Drain current limited by maximum junction termperature Thermal Characteristics Symbol Parameter FCP11N60 FCPF11N60 Units R Thermal Resistance, Junction-to-Case 1.0 3.5 °C/W θJC R Thermal Resistance, Case-to-Sink 0.5 -- °C/W θCS R Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W θJA ©2004 Rev. B, March 2004
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